/ Technical Information IGBT- FF1000R17IE4P IGBT-Module PrimePACK3 / IGBT4 and diode PrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Typical Applications High power converters Motor drives Wind turbines Electrical Features High short-circuit capability High surge current capability High current density Low switching losses T = 150C T = 150C vj op vj op V V with positive temperature coefficient CEsat CEsat Mechanical Features 4 kV AC 1 4 kV AC 1min insulation CTI(>400 Package with CTI > 400 / High creepage and clearance distances NTC Integrated NTC temperature sensor RoHS RoHS compliant Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.2 UL approved (E83335) 1 / Technical Information IGBT- FF1000R17IE4P IGBT-Module IGBT- / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage DC T = 60C, T = 175C I 1000 A H vj max C nom Continuous DC collector current t = 1 ms I 2000 A P CRM Repetitive peak collector current V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1000 A, V = 15 V T = 25C 2,00 2,45 V C GE vj Collector-emitter saturation voltage I = 1000 A, V = 15 V T = 125C V 2,35 2,80 V C GE vj CE sat IC = 1000 A, VGE = 15 V Tvj = 150C 2,45 3,00 V IC = 36,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 10,0 C GE G Gate charge Tvj = 25C RGint 1,5 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 81,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,60 nF Reverse transfer capacitance V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current IC = 1000 A, VCE = 900 V Tvj = 25C 0,55 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,60 s GE vj RGon = 1,2 Tvj = 150C 0,60 s IC = 1000 A, VCE = 900 V Tvj = 25C 0,10 s t r Rise time, inductive load V = 15 V T = 125C 0,12 s GE vj RGon = 1,2 Tvj = 150C 0,12 s IC = 1000 A, VCE = 900 V Tvj = 25C 1,00 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,25 s GE vj RGoff = 1,8 Tvj = 150C 1,30 s IC = 1000 A, VCE = 900 V Tvj = 25C 0,29 s t f Fall time, inductive load V = 15 V T = 125C 0,50 s GE vj RGoff = 1,8 Tvj = 150C 0,59 s IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25C 265 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 8000 A/s (T = 150C) T = 125C E 390 mJ GE vj vj on RGon = 1,2 Tvj = 150C 415 mJ IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25C 200 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3000 V/s (T = 150C)T = 125C E 295 mJ GE vj vj off RGoff = 1,8 Tvj = 150C 330 mJ VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 150C 4000 A CEmax CES sCE P vj IGBT / per IGBT RthJH 37,1 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.2 2