FF1200R17KP4 B2 IHM-A /IGBT4 IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode V = 1700V CES I = 1200A / I = 2400A C nom CRM Potential Applications Medium voltage converters High power converters Traction drives Motor drives Wind turbines Electrical Features T = 150C T = 150C vj op vj op V Low V CEsat CEsat Enlarged diode for regenerative operation T Extended operating temperature T vj op vj op Mechanical Features 4 kV 1 4 kV AC 1min insulation Standard housing (AlSiC) AlSiC base plate for increased thermal cycling capability High power density High power and thermal cycling capability Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2018-12-05FF1200R17KP4 B2 IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 80C, T = 150C I 1200 A C vj max CDC Continuous DC collector current TC = 25C, Tvj max = 150C IC 1700 A t = 1 ms I 2400 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 1200 A Tvj = 25C 1,80 2,20 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,10 2,60 V GE vj CE sat Tvj = 150C 2,20 2,70 V IC = 48,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 / 15 V Q 12,5 C GE G Gate charge Tvj = 25C RGint 1,6 Internal gate resistor f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 98,0 nF vj CE GE ies Input capacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,15 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 1200 A, VCE = 900 V Tvj = 25C 0,80 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,85 s GE vj R = 0,68 T = 150C 0,86 s Gon vj () IC = 1200 A, VCE = 900 V Tvj = 25C 0,19 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,20 s GE vj R = 0,68 T = 150C 0,20 s Gon vj () I = 1200 A, V = 900 V T = 25C 1,40 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 1,75 s GE vj R = 0,8 T = 150C 1,85 s Goff vj () I = 1200 A, V = 900 V T = 25C 0,28 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,48 s GE vj R = 0,8 T = 150C 0,53 s Goff vj () I = 1200 A, V = 900 V, L = 50 nH T = 25C 245 mJ C CE vj Turn-on energy loss per pulse V = -15 / 15 V, R = 0,68 T = 125C E 370 mJ GE Gon vj on T = 150C 415 mJ vj ( I = 1200 A, V = 900 V, L = 50 nH T = 25C 410 mJ C CE vj Turn-off energy loss per pulse V = -15 / 15 V, R = 0,8 T = 125C E 510 mJ GE Goff vj off T = 150C 535 mJ vj V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 4800 A CEmax CES sCE P vj IGBT / per IGBT RthJC 20,0 K/kW Thermal resistance, junction to case IGBT / per IGBT R 22,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.2 2018-12-05