FF1800R12IE5 PrimePACK3+ B-Serien Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTC PrimePACK3+ B-series module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC V = 1200V CES I = 1800A / I = 3600A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Hohe Kurzschlussrobustheit High short-circuit capability Sehr groe Robustheit Unbeatable robustness Tvj op = 175C Tvj op = 175C Trench IGBT 5 Trench IGBT 5 Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Hohe Leistungsdichte High power density Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2019-10-16FF1800R12IE5 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 95C, Tvj max = 175C ICDC 1800 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 3600 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 1800 A Tvj = 25C 1,70 2,15 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,00 2,45 V GE vj CE sat Tvj = 175C 2,15 2,60 V Gate-Schwellenspannung IC = 49,2 mA, VCE = VGE, Tvj = 25C VGEth 5,25 5,80 6,35 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 600 V Q 8,65 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,5 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 98,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,90 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1800 A, VCE = 600 V Tvj = 25C 0,24 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,29 s GE vj R = 0,82 T = 175C 0,31 s Gon vj Anstiegszeit, induktive Last IC = 1800 A, VCE = 600 V Tvj = 25C 0,19 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,20 s GE vj R = 0,82 T = 175C 0,20 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1800 A, V = 600 V T = 25C 0,57 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,63 s GE vj R = 0,82 T = 175C 0,66 s Goff vj Fallzeit, induktive Last I = 1800 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,12 s GE vj R = 0,82 T = 175C 0,14 s Goff vj Einschaltverlustenergie pro Puls I = 1800 A, V = 600 V, L = 30 nH T = 25C 130 mJ C CE vj Turn-on energy loss per pulse di/dt = 8150 A/s (T = 175C) T = 125C E 195 mJ vj vj on V = -15 / 15 V, R = 0,82 T = 175C 235 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 1800 A, V = 600 V, L = 30 nH T = 25C 210 mJ C CE vj Turn-off energy loss per pulse du/dt = 2350 V/s (T = 175C) T = 125C E 260 mJ vj vj off V = -15 / 15 V, R = 0,82 T = 175C 290 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 900 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 175C 6800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 17,3 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 11,4 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 175 C Temperature under switching conditions Datasheet 2 V 3.1 2019-10-16