/ Technical Information IGBT- FF200R12KS4 IGBT-modules 62mm C-Series IGBT 62mm C-Series module with the fast IGBT2 for high-frequency switching V = 1200V CES I = 200A / I = 400A C nom CRM Typical Applications High Frequency Switching Application Medical Applications Motor Drives Resonant Inverter Appliccations Servo Drives UPS UPS Systems Electrical Features High Short Circuit Capability, Self Limiting Short Circuit Current Low Switching Losses Unbeatable Robustness V V with positive Temperature Coefficient CEsat CEsat Mechanical Features CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances Isolated Base Plate Copper Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MB date of publication: 2013-10-02 approved by: WR revision: 3.4 UL approved (E83335) 1 / Technical Information IGBT- FF200R12KS4 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 65C, T = 150C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 275 A t = 1 ms I 400 A P CRM Repetitive peak collector current T = 25C, T = 150 P 1400 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 200 A, V = 15 V T = 25C 3,20 3,70 V C GE vj V CE sat Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C 3,85 V C GE vj IC = 8,00 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 2,10 C GE G Gate charge Tvj = 25C RGint 2,5 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 13,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,85 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 200 A, VCE = 600 V Tvj = 25C 0,10 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,11 s GE vj RGon = 4,7 () IC = 200 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj RGon = 4,7 () IC = 200 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGoff = 4,7 () IC = 200 A, VCE = 600 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,04 s GE vj RGoff = 4,7 () IC = 200 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V, di/dt = 3500 A/s T = 125C E 19,0 mJ GE vj on RGon = 4,7 ( IC = 200 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V, du/dt = 7000 V/s T = 125C E 12,0 mJ GE vj off RGoff = 4,7 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 1300 A CEmax CES sCE P vj IGBT / per IGBT R 0,09 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-10-02 approved by: WR revision: 3.4 2