FF200R12KS4P 62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with the fast IGBT2 for high-frequency switching and pre-applied Thermal Interface Material V = 1200V CES I = 200A / I = 400A C nom CRM Potentielle Anwendungen Potential Applications Anwendungen fr Resonanz Umrichter Resonant inverter applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application Medizinische Anwendungen Medical applications Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Niedrige Schaltverluste Low switching losses Sehr groe Robustheit Unbeatable robustness V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Isolierte Bodenplatte Isolated base plate Kupferbodenplatte Copper base plate Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2020-02-17FF200R12KS4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 45C, Tvj max = 150C ICDC 200 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 200 A Tvj = 25C 3,20 3,70 V VCE sat Collector-emitter saturation voltage V = 15 V T = 125C 3,85 V GE vj Gate-Schwellenspannung I = 8,00 mA, V = V , T = 25C V 4,50 5,50 6,50 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 / 15 V QG 2,10 C Gate charge Interner Gatewiderstand T = 25C R 2,5 vj Gint Internal gate resistor Eingangskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 13,0 nF Input capacitance Rckwirkungskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 0,85 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,10 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,11 s R = 4,7 Gon Anstiegszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,06 s C CE vj tr Rise time, inductive load VGE = -15 / 15 V Tvj = 125C 0,07 s R = 4,7 Gon Abschaltverzgerungszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,53 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,55 s GE vj R = 4,7 Goff Fallzeit, induktive Last I = 200 A, V = 600 V T = 25C 0,03 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,04 s GE vj R = 4,7 Goff Einschaltverlustenergie pro Puls I = 200 A, V = 600 V, L = 60 nH T = 25C mJ C CE vj Turn-on energy loss per pulse di/dt = 3500 A/s T = 125C E 19,0 mJ vj on V = -15 / 15 V, R = 4,7 GE Gon Abschaltverlustenergie pro Puls I = 200 A, V = 600 V, L = 60 nH T = 25C mJ C CE vj Turn-off energy loss per pulse du/dt = 7000 V/s T = 125C E 12,0 mJ vj off V = -15 / 15 V, R = 4,7 GE Goff Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data V = V -L di/dt t 10 s, T = 125C 1300 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 0,113 K/W thJH Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions Datasheet 2 V 3.0 2020-02-17