/ Technical Information IGBT- FF200R12KT3 IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 80C, T = 150C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 295 A t = 1 ms I 400 A P CRM Repetitive peak collector current T = 25C, T = 150 P 1050 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 200 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C 1,90 V C GE vj IC = 8,00 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 1,90 C GE G Gate charge Tvj = 25C RGint 3,8 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 14,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 200 A, VCE = 600 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,17 s GE vj RGon = 3,6 () IC = 200 A, VCE = 600 V Tvj = 25C 0,04 s t r Rise time, inductive load V = 15 V T = 125C 0,045 s GE vj RGon = 3,6 () IC = 200 A, VCE = 600 V Tvj = 25C 0,45 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,52 s GE vj RGoff = 3,6 () IC = 200 A, VCE = 600 V Tvj = 25C 0,10 s t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj RGoff = 3,6 () IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25C 10,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 4000 A/s T = 125C E 15,0 mJ GE vj on RGon = 3,6 ( IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25C 16,5 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 4500 V/s T = 125C E 25,0 mJ GE vj off RGoff = 3,6 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 800 A CEmax CES sCE P vj IGBT / per IGBT R 0,12 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 1 / Technical Information IGBT- FF200R12KT3 IGBT-modules , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 200 A F Continuous DC forward current t = 1 ms I 400 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 7800 As R P vj It - value / Characteristic Values min. typ. max. I = 200 A, V = 0 V T = 25C 1,65 2,15 V F GE vj VF Forward voltage I = 200 A, V = 0 V T = 125C 1,65 V F GE vj I = 200 A, - di /dt = 4000 A/s (T =125C) T = 25C 150 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 190 A R vj RM V = -15 V GE I = 200 A, - di /dt = 4000 A/s (T =125C) T = 25C 20,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 36,0 C R vj r V = -15 V GE I = 200 A, - di /dt = 4000 A/s (T =125C) T = 25C 9,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 17,0 mJ R vj rec V = -15 V GE / per diode R 0,20 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,06 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 2