/ Technical Information IGBT- FF450R12IE4 IGBT-modules PrimePACK2 /IGBT4 NTC PrimePACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / Preliminary Data VCES = 1200V I = 450A / I = 900A C nom CRM Typical Applications Motor Drives Resonant Inverter Appliccations Traction Drives UPS UPS Systems Wind Turbines Electrical Features T Extended Operation Temperature T vj op vj op High DC Stability High Short Circuit Capability, Self Limiting Short Circuit Current Low Switching Losses Unbeatable Robustness V CEsat VCEsat with positive Temperature Coefficient Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability High Power Density Substrate for Low Thermal Resistance Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AC date of publication: 2013-11-05 approved by: MS revision: 2.4 1 / Technical Information IGBT- FF450R12IE4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 450 A C vj max C nom Continuous DC collector current t = 1 ms I 900 A P CRM Repetitive peak collector current T = 25C, T = 175C P 2,55 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 450 A, V = 15 V T = 25C 1,75 2,05 V C GE vj Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 450 A, V = 15 V T = 150C 2,10 V C GE vj I = 16,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 3,20 C Gate charge T = 25C R 2,4 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 27,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,50 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 450 A, V = 600 V T = 25C 0,22 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 2,5 T = 150C 0,26 s Gon vj () I = 450 A, V = 600 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 2,5 T = 150C 0,10 s Gon vj () I = 450 A, V = 600 V T = 25C 0,60 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,70 s R = 3,1 T = 150C 0,74 s Goff vj () I = 450 A, V = 600 V T = 25C 0,09 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 3,1 T = 150C 0,16 s Goff vj () I = 450 A, V = 600 V, L = 45 nH T = 25C 42,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3700 A/s (Tvj = 150C) Tvj = 125C Eon 59,0 mJ R = 2,5 T = 150C 64,0 mJ Gon vj ( I = 450 A, V = 600 V, L = 45 nH T = 25C 40,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3100 V/s (Tvj = 150C)Tvj = 125C Eoff 52,0 mJ R = 3,1 T = 150C 59,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1800 A IGBT / per IGBT R 59,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 14,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AC date of publication: 2013-11-05 approved by: MS revision: 2.4 2