The FF450R12KE4HOSA1 is an insulated gate bipolar transistor manufactured by Infineon Technologies. It is designed for low-frequency to medium-frequency applications and offers a maximum power dissipation of 450 watts. This fieldstop insulated gate bipolar transistor is housed in an insulated metal substrate (IMS) package, which offers improved thermal management and reliability. It features a maximum drain current of 150 A, a maximum collector-emitter breakdown voltage of 1,200 volts, a switching frequency range of 0 to 20 kHz, and a maximum junction temperature of 110ºC.