X-On Electronics has gained recognition as a prominent supplier of FF450R12ME4P IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FF450R12ME4P IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FF450R12ME4P Infineon

FF450R12ME4P electronic component of Infineon
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See Product Specifications
Part No. FF450R12ME4P
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules MEDIUM POWER ECONO
Datasheet: FF450R12ME4P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 154.968 ea
Line Total: USD 154.97 
Availability - 2
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 154.968
12 : USD 148.885
30 : USD 148.874

   
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We are delighted to provide the FF450R12ME4P from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FF450R12ME4P and other electronic components in the IGBT Modules category and beyond.

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FF450R12ME4P EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereits aufgetragenem Thermal Interface Material EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC / pre-applied Thermal Interface Material V = 1200V CES I = 450A / I = 900A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-03-30FF450R12ME4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 55C, Tvj max = 175C IC nom 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A, VGE = 15 V Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 450 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 17,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 3,30 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,7 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,22 s GE vj R = 1,3 T = 150C 0,22 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj R = 1,3 T = 150C 0,07 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 600 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,58 s GE vj R = 1,3 T = 150C 0,62 s Goff vj Fallzeit, induktive Last I = 450 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,11 s GE vj R = 1,3 T = 150C 0,12 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 15,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 7000 A/s (T = 150C) T = 125C E 26,0 mJ GE vj vj on R = 1,3 T = 150C 28,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 38,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 55,5 mJ GE vj vj off R = 1,3 T = 150C 61,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,104 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-03-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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