Product Information

FM24CL16B-DG

FM24CL16B-DG electronic component of Infineon

Datasheet
F-RAM IIC FRAM 16K 3V

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6795 ea
Line Total: USD 2.6795

1237 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 1
Multiples : 1

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FM24CL16B-DG
Infineon

1 : USD 5.0514
10 : USD 4.9497
30 : USD 4.8817
100 : USD 4.8138

1237 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

FM24CL16B-DG
Infineon

1 : USD 2.6795
10 : USD 2.4495
100 : USD 2.1735
500 : USD 2.1275
1000 : USD 1.978
2500 : USD 1.955
4860 : USD 1.8285
11340 : USD 1.8285
25920 : USD 1.8285

     
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FM24CL16B 2 16-Kbit (2K 8) Serial (I C) F-RAM 16-Kbit (2K 8) Serial (I2C) F-RAM Features Functional Description The FM24CL16B is a 16-Kbit nonvolatile memory employing an 16-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 2K 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 10) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24CL16B performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 100 A active current at 100 kHz than EEPROM since write operations do not require an internally 3 A (typ) standby current elevated power supply voltage for write circuits. The 14 Voltage operation: V = 2.7 V to 3.65 V DD FM24CL16B is capable of supporting 10 read/write cycles, or 100 million times more write cycles than EEPROM. Industrial temperature: 40 C to +85 C These capabilities make the FM24CL16B ideal for nonvolatile Packages memory applications, requiring frequent or rapid writes. 8-pin small outline integrated circuit (SOIC) package Examples range from data logging, where the number of write 8-pin dual flat no leads (DFN) package cycles may be critical, to demanding industrial controls where the Restriction of hazardous substances (RoHS) compliant long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL16B provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram Address 2 K x 8 Counter Latch F-RAM Array 11 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84456 Rev. *L Revised December 5, 2018FM24CL16B Contents Pinouts ..............................................................................3 Capacitance .................................................................... 10 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 10 Functional Overview ........................................................4 AC Test Loads and Waveforms ..................................... 10 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 10 I2C Interface ......................................................................4 AC Switching Characteristics ....................................... 11 STOP Condition (P) .....................................................4 Power Cycle Timing ....................................................... 12 START Condition (S) ...................................................4 Ordering Information ...................................................... 13 Data/Address Transfer ................................................5 Ordering Code Definitions ......................................... 13 Acknowledge/No-acknowledge ...................................5 Package Diagrams .......................................................... 14 Slave Device Address .................................................6 Acronyms ........................................................................ 16 Addressing Overview (Word Address) ........................6 Document Conventions ................................................. 16 Data Transfer ..............................................................6 Units of Measure ....................................................... 16 Memory Operation ............................................................6 Document History Page ................................................. 17 Write Operation ...........................................................6 Sales, Solutions, and Legal Information ...................... 19 Read Operation ...........................................................7 Worldwide Sales and Design Support ....................... 19 Endurance .........................................................................8 Products .................................................................... 19 Maximum Ratings .............................................................9 PSoC Solutions ...................................................... 19 Operating Range ...............................................................9 Cypress Developer Community ................................. 19 DC Electrical Characteristics ..........................................9 Technical Support ..................................................... 19 Data Retention and Endurance .....................................10 Document Number: 001-84456 Rev. *L Page 2 of 19

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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