Product Information

FM24V02A-GTR

FM24V02A-GTR electronic component of Infineon

Datasheet
F-RAM NVRAM FRAM Memory Serial

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.3852 ea
Line Total: USD 3.39

4800 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4504 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

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FM24V02A-GTR
Infineon

1 : USD 3.3852
10 : USD 2.9634
30 : USD 2.6992
100 : USD 2.1314
500 : USD 2.0091
1000 : USD 1.9578

3441 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

FM24V02A-GTR
Infineon

1 : USD 7.7165
10 : USD 7.2335
25 : USD 7.061
100 : USD 6.394
250 : USD 6.3135
500 : USD 6.003
1000 : USD 5.796
2500 : USD 5.796
5000 : USD 5.796

     
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FM24V02A 2 256-Kbit (32K 8) Serial (I C) F-RAM 256-Kbit (32K 8) Serial (I2C) F-RAM Features Functional Description The FM24V02A is a 256-Kbit nonvolatile memory employing an 256-Kbit ferroelectric random access memory (F-RAM) advanced ferroelectric process. An F-RAM is nonvolatile and logically organized as 32K 8 14 performs reads and writes similar to a RAM. It provides reliable High-endurance 100 trillion (10 ) read/writes data retention for 151 years while eliminating the complexities, 151-year data retention (See the Data Retention and overhead, and system-level reliability problems caused by Endurance table) EEPROM and other nonvolatile memories. NoDelay writes Advanced high-reliability ferroelectric process Unlike EEPROM, the FM24V02A performs write operations at 2 bus speed. No write delays are incurred. Data is written to the Fast two-wire serial interface (I C) memory array immediately after each byte is successfully 1 Up to 3.4-MHz frequency transferred to the device. The next bus cycle can commence Direct hardware replacement for serial EEPROM without the need for data polling. In addition, the product offers Supports legacy timings for 100 kHz and 400 kHz substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes Device ID than EEPROM because write operations do not require an Manufacturer ID and Product ID internally elevated power supply voltage for write circuits. The Low power consumption 14 FM24V02A is capable of supporting 10 read/write cycles, or 175- A active current at 100 kHz 100 million times more write cycles than EEPROM. 150- A standby current These capabilities make the FM24V02A ideal for nonvolatile 8- A sleep mode current memory applications, requiring frequent or rapid writes. Low-voltage operation: V = 2.0 V to 3.6 V Examples range from data logging, where the number of write DD cycles may be critical, to demanding industrial controls where the Industrial temperature: 40 C to +85 C long write time of EEPROM can cause data loss. The 8-pin small outline integrated circuit (SOIC) package combination of features allows more frequent data writing with less overhead for the system. Restriction of hazardous substances (RoHS) compliant The FM24V02A provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related resources, click here. Logic Block Diagram Address 32 K x 8 Counter Latch F-RAM Array 15 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Control Logic Device ID and WP Manufacturer ID A0-A2 Note 2 1. The FM24V02A does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . Refer OL hys to the DC Electrical Characteristics table for more details. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90839 Rev. *I Revised May 11, 2017FM24V02A Contents Pinout ................................................................................3 Data Retention and Endurance ..................................... 12 Pin Definitions ..................................................................3 Capacitance ....................................................................12 Functional Overview ........................................................4 Thermal Resistance ........................................................ 12 Memory Architecture ........................................................4 AC Test Loads and Waveforms ..................................... 12 Two-wire Interface ............................................................4 AC Test Conditions ........................................................ 12 STOP Condition (P) .....................................................5 AC Switching Characteristics ....................................... 13 START Condition (S) ...................................................5 Power Cycle Timing ....................................................... 14 Data/Address Transfer ................................................5 Ordering Information ...................................................... 15 Acknowledge / No-Acknowledge .................................5 Ordering Code Definitions ......................................... 15 High Speed Mode (Hs-mode) ......................................6 Package Diagram ............................................................ 16 Slave Device Address .................................................6 Acronyms ........................................................................17 Addressing Overview ..................................................6 Document Conventions ................................................. 17 Data Transfer ..............................................................7 Units of Measure ....................................................... 17 Memory Operation ............................................................7 Document History Page ................................................. 18 Write Operation ...........................................................7 Sales, Solutions, and Legal Information ...................... 19 Read Operation ...........................................................8 Worldwide Sales and Design Support ....................... 19 Sleep Mode .................................................................9 Products ....................................................................19 Device ID .........................................................................10 PSoCSolutions .......................................................19 Maximum Ratings ...........................................................11 Cypress Developer Community ................................. 19 Operating Range .............................................................11 Technical Support ..................................................... 19 DC Electrical Characteristics ........................................11 Document Number: 001-90839 Rev. *I Page 2 of 19

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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