FM25040B 4-Kbit (512 8) Serial (SPI) Automotive F-RAM 4-Kbit (512 8) Serial (SPI) Automotive F-RAM Features Functional Description 4-Kbit ferroelectric random access memory (F-RAM) logically The FM25040B is a 4-Kbit nonvolatile memory employing an organized as 512 8 advanced ferroelectric process. A ferroelectric random access 13 High-endurance 10 trillion (10 ) read/writes memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years 121-year data retention (See the Data Retention and Endurance table) while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Unlike serial flash and EEPROM, the FM25040B performs write operations at bus speed. No write delays are incurred. Data is Up to 14 MHz frequency written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The FM25040B is capable of supporting 13 Software protection using Write Disable instruction 10 read/write cycles, or 10 million times more write cycles than Software block protection for 1/4, 1/2, or entire array EEPROM. These capabilities make the FM25040B ideal for nonvolatile Low power consumption memory applications requiring frequent or rapid writes. 300 A active current at 1 MHz Examples range from data collection, where the number of write 10 A (typ) standby current at +85 C cycles may be critical, to demanding industrial controls where the Voltage operation: V = 4.5 V to 5.5 V DD long write time of serial flash or EEPROM can cause data loss. Automotive-E temperature: 40 C to +125 C The FM25040B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The 8-pin small outline integrated circuit (SOIC) package FM25040B uses the high-speed SPI bus, which enhances the AEC Q100 Grade 1 compliant high-speed write capability of F-RAM technology. The device specifications are guaranteed over an automotive-e temperature Restriction of hazardous substances (RoHS) compliant range of 40 C to +125 C. For a complete list of related resources, click here. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 512 x 8 F-RAM Array Instruction Register 9 8 Address Register Counter SI SO Data OI/ Register 2 Nonvolatile Status Register Errata: The Write Enable Latch (WEL) bit in the Status Register of FM25040B part doesnt clear after executing the memory write (WRITE) operation at memory location(s) from 0x100 to 0x1FF. For more information, see Errata on page 19. Details include errata trigger conditions, scope of impact, available workarounds, and silicon revision applicability. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86151 Rev. *D Revised August 9, 2016FM25040B Contents Pinout ................................................................................3 Capacitance ....................................................................12 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 12 Functional Overview ........................................................4 AC Test Conditions ........................................................ 12 Memory Architecture ........................................................4 AC Switching Characteristics ....................................... 13 Serial Peripheral Interface SPI Bus ..............................4 Power Cycle Timing ....................................................... 15 SPI Overview ...............................................................4 Ordering Information ...................................................... 16 SPI Modes ...................................................................6 Ordering Code Definitions ......................................... 16 Power Up to First Access ............................................6 Package Diagram ............................................................ 17 Command Structure ....................................................6 Acronyms ........................................................................18 WREN - Set Write Enable Latch .................................6 Document Conventions ................................................. 18 WRDI - Reset Write Enable Latch ...............................6 Units of Measure ....................................................... 18 Status Register and Write Protection .............................6 Errata ...............................................................................18 RDSR - Read Status Register .....................................7 Part Numbers Affected .............................................. 19 WRSR - Write Status Register ....................................7 Qualification Status ................................................... 19 Memory Operation ............................................................8 Errata Summary ........................................................ 19 Write Operation ...........................................................8 Document History Page ................................................. 21 Read Operation ...........................................................8 Sales, Solutions, and Legal Information ...................... 22 HOLD Pin Operation ...................................................9 Worldwide Sales and Design Support ....................... 22 Endurance .................................................................10 Products ....................................................................22 Maximum Ratings ...........................................................11 PSoCSolutions .......................................................22 Operating Range .............................................................11 Cypress Developer Community ................................. 22 DC Electrical Characteristics ........................................11 Technical Support ..................................................... 22 Data Retention and Endurance .....................................12 Example of an F-RAM Life Time in an AEC-Q100 Automotive Application .....................12 Document Number: 001-86151 Rev. *D Page 2 of 22