Technische Information / Technical Information IGBT-Module FP15R12KE3 IGBT-Modules Vorlufig Preliminary Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rckw. Spitzensperrspannung T =25C V vj RRM 1600 V repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip T =80C I 25 A C FRMSM RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T =80C I 36 A C RMSmax maximum RMS current at Rectifier output Stostrom Grenzwert t = 10 ms, T = 25C I 196 A P vj FSM surge forward current t = 10 ms, T = 150C 158 A P vj 2 2 t = 10 ms, T = 25C Grenzlastintegral I t 192 A s P vj 2 2 t = 10 ms, T = 150C I t - value P vj 125 A s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung T =25C V 1200 V vj CES collector-emitter voltage T = 80C I Kollektor-Dauergleichstrom C C,nom. 15 A DC-collector current T = 25 C I C C 27 A Periodischer Kollektor Spitzenstrom t = 1 ms, T =80C I 30 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 89 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom I 15 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 30 A P FRM repetitive peak forw. current Grenzlastintegral 2 2 V = 0V, t = 10ms, T = 125C 44 R p vj I t A s 2 I t - value Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung T =25C V 1200 V vj CES collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C I 15 A C C,nom. DC-collector current = 25 C I T 27 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80C I 30 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 89 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom I 15 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 30 A P FRM repetitive peak forw. current prepared by: Thomas Passe date of publication: 2002-02-13 approved by: Ingo Graf revision: 6 1(12)Technische Information / Technical Information IGBT-Module FP15R12KE3 IGBT-Modules Vorlufig Preliminary Modul Isolation/ Module Isolation Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Diode Gleichrichter/ Diode Rectifier Durchlaspannung T = 150C, I = V 15 A - 1,05 - V vj F F forward voltage Schleusenspannung T = 150C V - 0,80 - V vj (TO) threshold voltage Ersatzwiderstand T = 150C r -15 - m vj T slope resistance Sperrstrom T = 150C, V = 1600 V I -5 - mA vj R R reverse current Modul Leitungswiderstand, Anschlsse-Chip T = 25C R - 11 - m C AA +CC lead resistance, terminals-chip min. typ. max. Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter Sttigungsspannung V = 15V, T = 25C, I = 15 A V - 1,7 2,15 V GE vj C CE sat collector-emitter saturation voltage V = 15V, T = 125C, I = 15 A - 2 - V GE vj C Gate-Schwellenspannung V = V , T = 25C, I = 0,5mA V 4,5 5,5 6,5 V CE GE vj C GE(TO) gate threshold voltage f = 1MHz, T = 25C Eingangskapazitt vj C - 1,0 - nF ies input capacitance V = 25 V, V = 0 V CE GE Kollektor-Emitter Reststrom V = 0V, T =125C, V = I 1200V - 5,0 -mA GE vj CE CES collector-emitter cut-off current Gate-Emitter Reststrom V = 0V, V =20V, T =25C I - - 400 nA CE GE vj GES gate-emitter leakage current Einschaltverzgerungszeit (ind. Last) I = I , V = C Nenn CC 600 V turn on delay time (inductive load) V = 15V, T = 25C, R = 68 Ohm t -56 - ns GE vj G d,on V = 15V, T = 125C, R = 68 Ohm - 57 - ns GE vj G I = I , V = Anstiegszeit (induktive Last) 600 V C Nenn CC rise time (inductive load) V = 15V, T = 25C, R = t GE vj G 68 Ohm r -30 - ns V = 15V, T = 125C, R = GE vj G 68 Ohm - 40 - ns Abschaltverzgerungszeit (ind. Last) I = I , V = 600 V C Nenn CC turn off delay time (inductive load) V = 15V, T = 25C, R = 68 Ohm t - 337 - ns GE vj G d,off V = 15V, T = 125C, R = 68 Ohm - 421 - ns GE vj G I = I , V = Fallzeit (induktive Last) C Nenn CC 600 V fall time (inductive load) V = 15V, T = 25C, R = t -66 - ns GE vj G 68 Ohm f V = 15V, T = 125C, R = 68 Ohm - 87 - ns GE vj G Einschaltverlustenergie pro Puls I = I , V = 600 V C Nenn CC turn-on energy loss per pulse V = 15V, T = 125C, R = E 68 Ohm - 2,2 - mWs GE vj G on L = S 80 nH I = I , V = Abschaltverlustenergie pro Puls C Nenn CC 600 V turn-off energy loss per pulse V = 15V, T = 125C, R = 68 Ohm E - 1,6 - mWs GE vj G off L = 80 nH S Kurzschluverhalten t 10s, V 15V, R = 68 Ohm P GE G SC Data T 125C, V = I 720 V SC -68 - A vj CC 2(12)