/ Technical Information IGBT- FP30R07U1E4 IGBT-modules SmartPIM1 /IGBT4 pressfitNTC SmartPIM1 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC VCES = 650V I = 30A / I = 60A C nom CRM Typical Applications Auxiliary Inverters Air Conditioning Motor Drives Servo Drives Electrical Features 650V Increased blocking voltage capability to 650V High Short Circuit Capability, Self Limiting Short Circuit Current V Low V CEsat CEsat IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op Mechanical Features Al O Al O Substrate with Low Thermal Resistance 2 3 2 3 Compact design PressFIT PressFIT Contact Technology Rugged Duplex frame construction Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: NK date of publication: 2013-11-11 approved by: MB revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FP30R07U1E4 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 650 V vj CES Collector-emitter voltage T = 100C, T = 175C I 30 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 50 A t = 1 ms I 60 A P CRM Repetitive peak collector current T = 25C, T = 175C P 160 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 30 A, V = 15 V T = 25C 1,60 2,00 V C GE vj Collector-emitter saturation voltage I = 30 A, V = 15 V T = 125C V 1,75 V C GE vj CE sat I = 30 A, V = 15 V T = 150C 1,80 V C GE vj I = 0,48 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,30 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,90 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,055 nF vj CE GE res Reverse transfer capacitance - VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 30 A, V = 300 V T = 25C 0,013 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,013 s R = 15 T = 150C 0,013 s Gon vj () I = 30 A, V = 300 V T = 25C 0,022 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 15 T = 150C 0,026 s Gon vj () I = 30 A, V = 300 V T = 25C 0,16 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,19 s R = 15 T = 150C 0,19 s Goff vj () I = 30 A, V = 300 V T = 25C 0,052 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,061 s R = 15 T = 150C 0,065 s Goff vj () I = 30 A, V = 300 V, L = 35 nH T = 25C 0,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1200 A/s (Tvj = 150C) Tvj = 125C Eon 0,75 mJ R = 15 T = 150C 0,80 mJ Gon vj ( I = 30 A, V = 300 V, L = 35 nH T = 25C 1,05 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3400 V/s (Tvj = 150C)Tvj = 125C Eoff 1,35 mJ R = 15 T = 150C 1,45 mJ Goff vj V 15 V, V = 360 V t 10 s, T = 25C 140 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 110 A IGBT / per IGBT R 0,90 0,95 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,85 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: NK date of publication: 2013-11-11 approved by: MB revision: 3.0 2