X-On Electronics has gained recognition as a prominent supplier of FP50R12KT4G_B15 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP50R12KT4G_B15 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FP50R12KT4G_B15 Infineon

FP50R12KT4G_B15 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No. FP50R12KT4G_B15
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules IGBT Module 50A 1200V
Datasheet: FP50R12KT4G_B15 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 95.48 ea
Line Total: USD 95.48 
Availability - 9
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 95.48
10 : USD 91.608

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FP50R12KT4G_B15 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP50R12KT4G_B15 and other electronic components in the IGBT Modules category and beyond.

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/ Technical Information IGBT- FP50R12KT4G B15 IGBT-modules EconoPIM3 /IGBT4 NTC EconoPIM3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC V = 1200V CES I = 50A / I = 100A C nom CRM Typical Applications Auxiliary Inverters Motor Drives Servo Drives Electrical Features Low Switching Losses V Low V CEsat CEsat T = 150C T = 150C vj op vj op V CEsat VCEsat with positive Temperature Coefficient Mechanical Features High Power and Thermal Cycling Capability NTC Integrated NTC temperature sensor Copper Base Plate Solder Contact Technology Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-11-05 approved by: RS revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FP50R12KT4G B15 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 50 A C vj max C nom Continuous DC collector current t = 1 ms I 100 A P CRM Repetitive peak collector current T = 25C, T = 175C P 280 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 50 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 50 A, V = 15 V T = 150C 2,25 V C GE vj I = 1,70 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,38 C Gate charge T = 25C R 4,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,80 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,10 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 50 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 15 T = 150C 0,17 s Gon vj () I = 50 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 15 T = 150C 0,04 s Gon vj () I = 50 A, V = 600 V T = 25C 0,33 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 15 T = 150C 0,45 s Goff vj () I = 50 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 15 T = 150C 0,17 s Goff vj () I = 50 A, V = 600 V, L = 20 nH T = 25C 5,70 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1400 A/s (Tvj = 150C) Tvj = 125C Eon 7,70 mJ R = 15 T = 150C 8,40 mJ Gon vj ( I = 50 A, V = 600 V, L = 20 nH T = 25C 2,80 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 4,30 mJ R = 15 T = 150C 4,80 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 180 A IGBT / per IGBT R 0,54 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,145 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-05 approved by: RS revision: 3.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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