FP50R12KT4GBOSA1 Infineon

FP50R12KT4GBOSA1 electronic component of Infineon
FP50R12KT4GBOSA1 Infineon
FP50R12KT4GBOSA1 IGBT Modules
FP50R12KT4GBOSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FP50R12KT4GBOSA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP50R12KT4GBOSA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. FP50R12KT4GBOSA1
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules
FP50R12KT4GBOSA1 is an Insulated Gate Bipolar Transistor (IGBT) by Infineon.
Datasheet: FP50R12KT4GBOSA1 Datasheet (PDF)
Price (USD)
25: USD 132.8906 ea
Line Total: USD 3322.27 
Availability : 31
  
Ship by Wed. 01 Oct to Tue. 07 Oct
QtyUnit Price
25$ 132.8906
100$ 126.25
500$ 119.6094
1000$ 112.9531
10000$ 106.3125

Availability 31
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 25
Multiples : 1
QtyUnit Price
25$ 132.8906
100$ 126.25
500$ 119.6094
1000$ 112.9531
10000$ 106.3125


Availability 8
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 2
Multiples : 1
QtyUnit Price
2$ 198.6016

   
Manufacturer
Product Category
Brand
Transistor Polarity
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FP50R12KT4GBOSA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP50R12KT4GBOSA1 and other electronic components in the IGBT Modules category and beyond.

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The FP50R12KT4GBOSA1 is a member of the CoolMOS CAF series of power MOSFETs by Infineon Technologies AG. This device is a N-Channel MOSFET with an RDS (on) of 12m? and a double-sided cool MOS technology. It has a rated current of 50A, a maximum drain source voltage of 600V, and a maximum gate-source voltage of +/- 20V. The device is housed in a top-side insulated SOAC845 package and is suitable for lighting, motor control, and solar applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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