/ Technical Information IGBT- FS100R12KT4 IGBT-modules EconoPACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 100 A C vj max C nom Continuous DC collector current t = 1 ms I 200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 515 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 100 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,80 C Gate charge T = 25C R 7,5 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 100 A, V = 600 V T = 25C 0,13 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,6 T = 150C 0,15 s Gon vj () I = 100 A, V = 600 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 1,6 T = 150C 0,035 s Gon vj () I = 100 A, V = 600 V T = 25C 0,30 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,38 s R = 1,6 T = 150C 0,40 s Goff vj () I = 100 A, V = 600 V T = 25C 0,045 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 1,6 T = 150C 0,09 s Goff vj () I = 100 A, V = 600 V, L = 25 nH T = 25C 7,20 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2600 A/s (Tvj = 150C) Tvj = 125C Eon 9,50 mJ R = 1,6 T = 150C 10,5 mJ Gon vj ( I = 100 A, V = 600 V, L = 25 nH T = 25C 5,40 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 8,20 mJ R = 1,6 T = 150C 9,00 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A IGBT / per IGBT R 0,29 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,19 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.0 1 / Technical Information IGBT- FS100R12KT4 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 100 A F Continuous DC forward current t = 1 ms I 200 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 1550 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 1500 As / Characteristic Values min. typ. max. I = 100 A, V = 0 V T = 25C 1,70 2,15 V F GE vj Forward voltage I = 100 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 100 A, VGE = 0 V Tvj = 150C 1,65 V I = 100 A, - di /dt = 2600 A/s (T =150C) T = 25C 140 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 145 A R vj RM VGE = -15 V Tvj = 150C 150 A I = 100 A, - di /dt = 2600 A/s (T =150C) T = 25C 9,60 C F F vj vj Recovered charge V = 600 V T = 125C Q 17,0 C R vj r VGE = -15 V Tvj = 150C 19,0 C I = 100 A, - di /dt = 2600 A/s (T =150C) T = 25C 4,10 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 7,00 mJ R vj rec VGE = -15 V Tvj = 150C 8,00 mJ / per diode RthJC 0,50 K/W Thermal resistance, junction to case / per diode R 0,325 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.0 2