Technische Information / Technical Information IGBT-Module FS150R07N3E4 IGBT-modules EconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC Vorlufige Daten / Preliminary Data VCES = 650V I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor Drives Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability to 650V Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Kupferbodenplatte Copper Base Plate Ltverbindungstechnik Solder Contact Technology Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-11-05 approved by: RS revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FS150R07N3E4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 55C, T = 175C I 150 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 430 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 150 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 150 A, V = 15 V T = 150C 1,75 V C GE vj Gate-Schwellenspannung I = 2,40 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,50 C Gate charge Interner Gatewiderstand T = 25C R 2,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 9,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,285 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 150 A, V = 300 V T = 25C 0,12 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 3,3 T = 150C 0,14 s Gon vj Anstiegszeit, induktive Last I = 150 A, V = 300 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 3,3 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 150 A, V = 300 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,37 s R = 3,3 T = 150C 0,38 s Goff vj Fallzeit, induktive Last I = 150 A, V = 300 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 3,3 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 150 A, V = 300 V, L = 30 nH T = 25C 0,94 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5400 A/s (Tvj = 150C) Tvj = 125C Eon 1,50 mJ R = 3,3 T = 150C 1,65 mJ Gon vj Abschaltverlustenergie pro Puls I = 150 A, V = 300 V, L = 30 nH T = 25C 5,75 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3800 V/s (Tvj = 150C)Tvj = 125C Eoff 7,40 mJ R = 3,3 T = 150C 7,85 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 10 s, T = 25C 720 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 570 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,35 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,085 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-05 approved by: RS revision: 2.0 2