/ Technical Information IGBT- FS225R12KE4 IGBT-modules EconoPACK+ B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter Emitter Controlled Diode EconoPACK+ B-series module with trench/fieldstop IGBT4 and optimized Emitter Controlled diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 225 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 320 A t = 1 ms I 450 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1100 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 225 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 225 A, V = 15 V T = 125C V 2,10 V C GE vj CE sat I = 225 A, V = 15 V T = 150C 2,15 V C GE vj I = 7,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,55 C Gate charge T = 25C R 3,3 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 13,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,705 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 225 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 1,6 T = 150C 0,18 s Gon vj () I = 225 A, V = 600 V T = 25C 0,04 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 1,6 T = 150C 0,04 s Gon vj () I = 225 A, V = 600 V T = 25C 0,38 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,47 s R = 1,6 T = 150C 0,50 s Goff vj () I = 225 A, V = 600 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,09 s R = 1,6 T = 150C 0,10 s Goff vj () I = 225 A, V = 600 V, L = 80 nH T = 25C 6,80 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5750 A/s (Tvj = 150C) Tvj = 125C Eon 12,5 mJ R = 1,6 T = 150C 15,0 mJ Gon vj ( I = 225 A, V = 600 V, L = 80 nH T = 25C 17,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3400 V/s (Tvj = 150C)Tvj = 125C Eoff 26,5 mJ R = 1,6 T = 150C 29,5 mJ Goff vj V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 900 A IGBT / per IGBT R 0,14 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,052 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-11-04 approved by: WR revision: 2.0 1 / Technical Information IGBT- FS225R12KE4 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 225 A F Continuous DC forward current t = 1 ms I 450 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 10000 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 8100 As / Characteristic Values min. typ. max. I = 225 A, V = 0 V T = 25C 1,65 2,10 V F GE vj Forward voltage I = 225 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 225 A, VGE = 0 V Tvj = 150C 1,65 V I = 225 A, - di /dt = 5750 A/s (T =150C) T = 25C 300 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 320 A R vj RM VGE = -15 V Tvj = 150C 340 A I = 225 A, - di /dt = 5750 A/s (T =150C) T = 25C 22,5 C F F vj vj Recovered charge V = 600 V T = 125C Q 43,0 C R vj r VGE = -15 V Tvj = 150C 49,5 C I = 225 A, - di /dt = 5750 A/s (T =150C) T = 25C 12,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 22,0 mJ R vj rec VGE = -15 V Tvj = 150C 25,0 mJ / per diode RthJC 0,19 K/W Thermal resistance, junction to case / per diode R 0,071 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions / NTC-Thermistor / Characteristic Values min. typ. max. T = 25C R 5,00 k C 25 Rated resistance R100 TC = 100C, R100 = 493 R/R -5 5 % Deviation of R100 T = 25C P 20,0 mW C 25 Power dissipation B- R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B- R = R exp B (1/T - 1/(298,15 K)) B 3411 K 2 25 25/80 2 25/80 B-value B- R = R exp B (1/T - 1/(298,15 K)) B 3433 K 2 25 25/100 2 25/100 B-value Specification according to the valid application note. prepared by: MB date of publication: 2013-11-04 approved by: WR revision: 2.0 2