FS35R12YT3 Infineon

FS35R12YT3 electronic component of Infineon Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FS35R12YT3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FS35R12YT3 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. FS35R12YT3
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules N-CH 1.2KV 40A
Datasheet: FS35R12YT3 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 72.7168
2$ 71.3911
5$ 71.3911
10$ 71.2585
25$ 68.6468
50$ 68.3419
100$ 65.4252
250$ 65.4252
500$ 60.4007
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Minimum Operating Temperature
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Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Height
Length
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Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FS35R12YT3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FS35R12YT3 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / technical information IGBT-Module FS35R12YT3 IGBT-modules Vorlufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Hchstzulssige Werte / maximum rated values %& () *+,- . * / + 0 () 1+ 234 6 /) + () 1+ 5 6 7 8 . 9 + 0 () 1+: 6 < * + () >3> = < 7 * ,- AB * Charakteristische Werte / characteristic values C D 1+ 69 * , . *9 %& () *+, EF> .9 9. * 1+ 69 * , . *9 %& . () .9G * < = 1+ .9 69 *+, * ,9 %& () * ,>H 9 90 I9 * < * , . * A. * J 9 5 K) 1 < = %& () L2> I9 M 7 D . NO79 %& ()9 *+, *9 * , * )LPE 9 Q R = 7 D . NO79 %& ()9 *+, *9 * , * )SPE 9 G Q *+, . *9 * , *9 %& () 1+,- 9 6 < *+, *9 * , *9 %& () 1 ,- 5 6 7T 7 U V W 1+ 69 *+, I * U W * , X. *9 32 M9 %& () Y 32 9 0 K * , X. *9 32 M9 %& . () 9 G K 6 7 U V W 1+ 69 *+, I * U W * , X. *9 32 M9 %& () S 9 K * , X. *9 32 M9 %& . () 9 K 6 7T 7 U V W 1+ 69 *+, I * U W * , X. *9 3ZZ M9 %& () Y 3ZZ 95 K * , X. *9 3ZZ M9 %& . () 9 K Q 7 U V W 1+ 69 *+, I * U W * , X. *9 3ZZ M9 %& () Z 9 K * , X. *9 3ZZ M9 %& . () 9. K 1+ 69 *+, I *9 V- 5 O * , X. *9 32 M9 %& () 32 9I * , X. *9 32 M9 %& . () 9 6 1+ 69 *+, I *9 V- 5 O * , X. *9 3ZZ M9 %& () 3ZZ 9I * , X. *9 3ZZ M9 %& . () 59 7 8 . K 9 * , . * 1-+ .5 6 ) %& . ()9 *++ G *9 *+,4F *+,- VE+, B 1 D = 1<a >Hb+ 9 9I B 9 1<a c D = 1<a B 1<a >H+f 95 B 9 d8FE>P . B W B deSPFEP . B W 1Technische Information / technical information IGBT-Module FS35R12YT3 IGBT-modules Vorlufige Daten preliminary data Diode-Wechselrichter / diode-inverter Hchstzulssige Werte / maximum rated values 7 %& () *:: . * / 1g 6 /) = 7 8 . 1g: 6 = < 7 *: *9 8 . 9 %& . () 1h G 6h 1h Charakteristische Werte / characteristic values C / 1g 69 * , *9 %& () *g .9I 9. * = 1g 69 * , *9 %& . () .9I * R 7 1g 69 gB . 6BK *: I *9 * , . *9 %& () 1: I 9 6 *: I *9 * , . *9 %& . () I 9 6 7T 1g 69 gB . 6BK *: I *9 * , . *9 %& () JS 90 K) *: I *9 * , . *9 %& . () I90 K) 6 1g 69 gB . 6BK *: I *9 * , . *9 %& () SPi .95 *: I *9 * , . *9 %& . () 9 1 D = / >Hb+ .9 .9 B 9 c D = / B >H+f 9 B 9 d8FE>P . B W B deSPFEP . B W NTC-Widerstand / NTC-thermistor Charakteristische Werte / characteristic values C j = + () kl 9 M 6 = mnn + . ()9 mnn 5G M o B p mnn * + () kl 9 = a k kl C qaklrlnU.B k .BU G09 . WWs aklrln a 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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