Technische Information / Technical Information IGBT-Module FS75R12KS4 IGBT-modules Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 150C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 100 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 500 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 3,20 3,70 V C GE vj V CE sat Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung IC = 3,00 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,80 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 5,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 5,10 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,32 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,12 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,13 s GE vj RGon = 7,5 Anstiegszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj RGon = 7,5 Abschaltverzgerungszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,31 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,36 s GE vj RGoff = 7,5 Fallzeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,02 s t f Fall time, inductive load V = 15 V T = 125C 0,03 s GE vj RGoff = 7,5 Einschaltverlustenergie pro Puls IC = 75 A, VCE = 600 V, LS = 30 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 9,00 mJ GE vj on RGon = 7,5 Abschaltverlustenergie pro Puls IC = 75 A, VCE = 600 V, LS = 30 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 3,80 mJ GE vj off RGoff = 7,5 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 450 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,25 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-02 approved by: RS revision: 2.1 1Technische Information / Technical Information IGBT-Module FS75R12KS4 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 75 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 150 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 2450 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 75 A, V = 0 V T = 25C 2,00 2,40 V F GE vj VF Forward voltage I = 75 A, V = 0 V T = 125C 1,70 V F GE vj Rckstromspitze I = 75 A, - di /dt = 1800 A/s (T =125C) T = 25C 65,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 95,0 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 75 A, - di /dt = 1800 A/s (T =125C) T = 25C 5,25 C F F vj vj Recovered charge V = 600 V T = 125C Q 14,0 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 75 A, - di /dt = 1800 A/s (T =125C) T = 25C 1,80 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 4,50 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,43 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions Modul / Module Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min VISOL 2,5 kV Isolation test voltage Innere Isolation Basisisolierung (Schutzklasse 1, EN61140) AI 0 2 3 Internal isolation basic insulation (class 1, IEC 61140) Kriechstrecke Kontakt - Khlkrper / terminal to heatsink 10,0 mm Creepage distance Kontakt - Kontakt / terminal to terminal Luftstrecke Kontakt - Khlkrper / terminal to heatsink 7,5 mm Clearance Kontakt - Kontakt / terminal to terminal Vergleichszahl der Kriechwegbildung CTI > 225 Comperative tracking index min. typ. max. Wrmewiderstand, Gehuse bis Khlkrper pro Modul / per module RthCH 0,009 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Modulstreuinduktivitt L 28 nH sCE Stray inductance module Modulleitungswiderstand, Anschlsse - Chip TC = 25C, pro Schalter / per switch RCC +EE 1,80 m Module lead resistance, terminals - chip Lagertemperatur Tstg -40 125 C Storage temperature Anzugsdrehmoment f. Modulmontage Schraube M5 - Montage gem. gltiger Applikationsschrift M 3,00 - 6,00 Nm Mounting torque for modul mounting Screw M5 - Mounting according to valid application note Gewicht G 300 g Weight prepared by: MK date of publication: 2013-10-02 approved by: RS revision: 2.1 2