Technische Information / Technical Information IGBT-Modul FZ1200R17HP4 B2 IGBT-Module IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES IC nom = 1200A / ICRM = 2400A Typische Anwendungen Typical Applications Anwendungen fr Resonanz Umrichter Resonant inverter applications Hochleistungsumrichter High power converters Traktionsumrichter Traction drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Niedriges V Low V CEsat CEsat Verstrkte Diode fr Rckspeisebetrieb Enlarged diode for regenerative operation Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Hohe Leistungsdichte High power density IHM B Gehuse IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FZ1200R17HP4 B2 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 1200 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 7,80 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 1200 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat I = 1200 A, V = 15 V T = 150C 2,40 V C GE vj Gate-Schwellenspannung I = 48,0 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 12,5 C Gate charge Interner Gatewiderstand T = 25C R 1,6 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 97,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 3,20 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 1200 A, V = 900 V T = 25C 0,68 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,71 s R = 0,2 T = 150C 0,72 s Gon vj Anstiegszeit, induktive Last I = 1200 A, V = 900 V T = 25C 0,12 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 0,2 T = 150C 0,13 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1200 A, V = 900 V T = 25C 1,10 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,20 s R = 0,8 T = 150C 1,25 s Goff vj Fallzeit, induktive Last I = 1200 A, V = 900 V T = 25C 0,35 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 0,8 T = 150C 0,56 s Goff vj Einschaltverlustenergie pro Puls I = 1200 A, V = 900 V, L = 50 nH T = 25C 170 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 10500 A/s (Tvj = 150C)Tvj = 125C Eon 245 mJ R = 0,2 T = 150C 275 mJ Gon vj Abschaltverlustenergie pro Puls I = 1200 A, V = 900 V, L = 50 nH T = 25C 320 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 415 mJ R = 0,8 T = 150C 440 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 5000 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 14,2 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 16,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2