/ Technical Information IGBT- FZ1200R17KF6C B2 IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer Emitter Controlled Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values Tvj = 25C 1700 V V CES Collector-emitter voltage T = 125C 1700 vj T = 80C, T = 150C I 1200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 1950 A t = 1 ms I 2400 A P CRM Repetitive peak collector current T = 25C, T = 150C P 9,60 kW C vj max tot Total power dissipation VGES +/- 20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1200 A, V = 15 V T = 25C 2,60 3,10 V C GE vj V CE sat Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C 3,10 3,60 V C GE vj IC = 80,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 14,5 C GE G Gate charge Tvj = 25C RGint 0,81 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 79,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,00 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 1200 A, VCE = 900 V Tvj = 25C 0,30 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 1,2 () IC = 1200 A, VCE = 900 V Tvj = 25C 0,16 s t r Rise time, inductive load V = 15 V T = 125C 0,16 s GE vj RGon = 1,2 () IC = 1200 A, VCE = 900 V Tvj = 25C 1,10 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,10 s GE vj RGoff = 1,2 () IC = 1200 A, VCE = 900 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,14 s GE vj RGoff = 1,2 () IC = 1200 A, VCE = 900 V, LS = 50 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 330 mJ GE vj on RGon = 1,2 ( IC = 1200 A, VCE = 900 V, LS = 50 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 480 mJ GE vj off RGoff = 1,2 VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 4800 A CEmax CES sCE P vj IGBT / per IGBT R 13,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 12,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: WB date of publication: 2013-11-25 approved by: DTS revision: 2.1 1 / Technical Information IGBT- FZ1200R17KF6C B2 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values Tvj = 25C 1700 V V RRM Repetitive peak reverse voltage T = 125C 1700 vj I 1200 A F Continuous DC forward current t = 1 ms I 2400 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 380 kAs R P vj It - value ton min 10,0 s Minimum turn-on time / Characteristic Values min. typ. max. I = 1200 A, V = 0 V T = 25C 2,10 2,50 V F GE vj V F Forward voltage I = 1200 A, V = 0 V T = 125C 2,10 2,50 V F GE vj I = 1200 A, - di /dt = 7200 A/s (T =125C) T = 25C 970 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 1150 A R vj RM V = -15 V GE I = 1200 A, - di /dt = 7200 A/s (T =125C) T = 25C 200 C F F vj vj Recovered charge V = 900 V T = 125C Q 380 C R vj r V = -15 V GE I = 1200 A, - di /dt = 7200 A/s (T =125C) T = 25C 110 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 210 mJ R vj rec V = -15 V GE / per diode RthJC 25,0 K/kW Thermal resistance, junction to case / per diode R 23,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 125 C Temperature under switching conditions prepared by: WB date of publication: 2013-11-25 approved by: DTS revision: 2.1 2