/ Technical Information IGBT- FZ400R12KE3 B1 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 80C, T = 150C I 400 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 650 A t = 1 ms I 800 A P CRM Repetitive peak collector current T = 25C, T = 150 P 2250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 400 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C 2,00 V C GE vj IC = 16,0 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 3,70 C GE G Gate charge Tvj = 25C RGint 1,9 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,10 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 400 A, VCE = 600 V Tvj = 25C 0,25 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 1,8 () IC = 400 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 1,8 () IC = 400 A, VCE = 600 V Tvj = 25C 0,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,65 s GE vj RGoff = 1,8 () IC = 400 A, VCE = 600 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,18 s GE vj RGoff = 1,8 () IC = 400 A, VCE = 600 V, LS = 85 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 33,0 mJ GE vj on RGon = 1,8 ( IC = 400 A, VCE = 600 V, LS = 85 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 59,0 mJ GE vj off RGoff = 1,8 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 1600 A CEmax CES sCE P vj IGBT / per IGBT R 0,055 K/W thJC Thermal resistance, junction to case T -40 125 C vj op Temperature under switching conditions prepared by: MM date of publication: 2013-10-02 approved by: WR revision: 3.2 1 / Technical Information IGBT- FZ400R12KE3 B1 IGBT-modules , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 400 A F Continuous DC forward current t = 1 ms I 800 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 31000 As R P vj It - value / Characteristic Values min. typ. max. I = 400 A, V = 0 V T = 25C 1,65 2,15 V F GE vj VF Forward voltage I = 400 A, V = 0 V T = 125C 1,65 V F GE vj I = 400 A, - di /dt = 4000 A/s (T =125C) T = 25C 280 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 360 A R vj RM V = -15 V GE I = 400 A, - di /dt = 4000 A/s (T =125C) T = 25C 40,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 75,0 C R vj r V = -15 V GE I = 400 A, - di /dt = 4000 A/s (T =125C) T = 25C 18,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 34,0 mJ R vj rec V = -15 V GE / per diode R 0,125 K/W thJC Thermal resistance, junction to case Tvj op -40 125 C Temperature under switching conditions prepared by: MM date of publication: 2013-10-02 approved by: WR revision: 3.2 2