FZ400R33KL2C B5 / Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values Tvj = 25C 3300 V V CES Collector-emitter voltage T = -25C 3300 vj T = 80C, T = 150C I 400 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 750 A t = 1 ms I 800 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 400 A, VGE = 15 V Tvj = 25C 3,00 3,65 V VCE sat Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C 3,70 4,45 V C GE vj I = 40,0 mA, V = V , T = 25C V 4,20 5,10 6,00 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V, VCE = 1800V QG 7,50 C Gate charge T = 25C R 1,3 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 48,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,70 nF vj CE GE res Reverse transfer capacitance - VCE = 3300 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 400 A, V = 1800 V T = 25C 1,00 s C CE vj td on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 1,00 s R = 13 , C = 100 nF Gon GE () I = 400 A, V = 1800 V T = 25C 0,40 s C CE vj tr Rise time, inductive load VGE = 15 V Tvj = 125C 0,40 s R = 13 , C = 100 nF Gon GE () I = 400 A, V = 1800 V T = 25C 3,70 s C CE vj td off Turn-off delay time, inductive load V = 15 V T = 125C 3,90 s GE vj R = 13 , C = 100 nF Goff GE () I = 400 A, V = 1800 V T = 25C 0,25 s C CE vj tf Fall time, inductive load V = 15 V T = 125C 0,35 s GE vj R = 13 , C = 100 nF Goff GE () I = 400 A, V = 1800 V, L = 60 nH T = 25C 900 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 3000 A/s T = 125C E 1200 mJ GE vj on R = 6,2 , C = 100 nF Gon GE ( I = 400 A, V = 1800 V, L = 60 nH T = 25C 440 mJ C CE S vj Turn-off energy loss per pulse V = 15 V T = 125C E 600 mJ GE vj off R = 13 , C = 100 nF Goff GE V 15 V, V = 2500 V GE CC ISC SC data V = V -L di/dt t 10 s, T = 125C 1800 A CEmax CES sCE P vj IGBT / per IGBT R 25,5 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT RthCH 24,0 K/kW Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 125 C vj op Temperature under switching conditions Datasheet 1 V 2.1 2018-01-15FZ400R33KL2C B5 Preliminary Data , / Diode, Inverter / Maximum Rated Values Tvj = 25C 3300 V V RRM Repetitive peak reverse voltage T = -25C 3300 vj IF 400 A Continuous DC forward current t = 1 ms I 800 A P FRM Repetitive peak forward current I2t- VR = 0 V, tP = 10 ms, Tvj = 125C It 72,0 kAs It - value T = 125C P 600 kW vj RQM Maximum power dissipation t 10,0 s on min Minimum turn-on time / Characteristic Values min. typ. max. IF = 400 A, VGE = 0 V Tvj = 25C 2,60 t.b.d. V VF Forward voltage I = 400 A, V = 0 V T = 125C 2,55 V F GE vj I = 400 A, - di /dt = 3000 A/s (T =125C) T = 25C 600 A F F vj vj Peak reverse recovery current VR = 1800 V Tvj = 125C IRM 670 A V = -15 V GE I = 400 A, - di /dt = 3000 A/s (T =125C) T = 25C 270 C F F vj vj Recovered charge VR = 1800 V Tvj = 125C Qr 480 C V = -15 V GE I = 400 A, - di /dt = 3000 A/s (T =125C) T = 25C 250 mJ F F vj vj Reverse recovery energy VR = 1800 V Tvj = 125C Erec 500 mJ V = -15 V GE / per diode R 51,0 K/kW thJC Thermal resistance, junction to case / per diode RthCH 48,0 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions Datasheet 2 V 2.1 2018-01-15