FZ600R65KE3 hochisolierendes Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 6500V CES I = 600A / I = 1200A C nom CRM Potentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Traktionsumrichter Traction drives Elektrische Eigenschaften Electrical Features Niedriges VCEsat Low VCEsat Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Erweiterter Lagertemperaturbereich bis zu Tstg = Extended storage temperature down to Tstg = -55C -55C Gehuse mit CTI > 600 Package with CTI > 600 Gehuse mit erweiterten Package with enhanced insulation of 10.4kV AC Isolationseigenschaften von 10,4kV AC 10s 10s Groe Luft- und Kriechstrecken High creepage and clearance distances Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.4 www.infineon.com 2020-05-06FZ600R65KE3 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = 125C 6500 Collector-emitter voltage T = 25C V 6500 V vj CES T = -50C 5900 vj Kollektor-Dauergleichstrom T = 80C, T = 150C I 600 A C vj max CDC Continuous DC collector current Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 1200 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A T = 25C 3,00 3,40 V C vj V CE sat Collector-emitter saturation voltage VGE = 15 V Tvj = 125C 3,70 4,30 V Gate-Schwellenspannung IC = 105 mA, VCE = VGE, Tvj = 25C VGEth 5,40 6,00 6,60 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 3600 V Q 25,0 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,75 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 160 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 6500 V, V = 0 V T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 3600 V Tvj = 25C 0,64 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,65 s GE vj R = 1,3 Gon Anstiegszeit, induktive Last IC = 600 A, VCE = 3600 V Tvj = 25C 0,18 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,20 s GE vj R = 1,3 Gon Abschaltverzgerungszeit, induktive Last I = 600 A, V = 3600 V T = 25C 7,30 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 7,60 s GE vj R = 8,2 Goff Fallzeit, induktive Last I = 600 A, V = 3600 V T = 25C 0,40 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,50 s GE vj R = 8,2 Goff Einschaltverlustenergie pro Puls I = 600 A, V = 3600 V, L = 280 nH T = 25C 3400 mJ C CE vj Turn-on energy loss per pulse di/dt = 2400 A/s T = 125C E 5200 mJ vj on V = -15 / 15 V, R = 1,3 GE Gon Abschaltverlustenergie pro Puls I = 600 A, V = 3600 V, L = 280 nH T = 25C 2900 mJ C CE vj Turn-off energy loss per pulse V = -15 / 15 V, R = 8,2 T = 125C E 3400 mJ GE Goff vj off Kurzschluverhalten V 15 V, V = 4500 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 125C 3600 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 10,2 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 9,20 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -50 125 C Temperature under switching conditions Datasheet 2 V 3.4 2020-05-06