Product Information

HFB25HJ20

HFB25HJ20 electronic component of Infineon

Datasheet
Diode Switching 200V 25A 3-Pin SMD-0.5

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 262.6657 ea
Line Total: USD 13133.28

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 50
Multiples : 50

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HFB25HJ20
Infineon

50 : USD 262.6657
10 : USD 253.4497
50 : USD 239.6174
100 : USD 227.3293
250 : USD 216.5854

     
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PD-94150C HFB25HJ20 FRED Ultrafast, Soft Recovery Diode V = 200V R Reduced RFI and EMI Reduced Snubbing I = 25A F(AV) Extensive Characterization of Recovery Parameters Hermetic t = 35ns Surface Mount rr ESD Rating: Class NS per MIL-STD-750, Method 1020 These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Parameter Max. Units V Cathode to Anode Voltage 200 V R I Continuous Forward Current, T = 106C 25 F(AV) C I Single Pulse Forward Current, T = 25C 150 FSM C P T = 25C Maximum Power Dissipation 70 W D C T T Operating Junction and Storage Temperature Range -55 to +150 C J, STG CASE STYLE SMD-0.5 www.irf.com 1 HFB25HJ20 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions V Cathode Anode Breakdown Voltage 200 V I = 100A BR R V Forward Voltage 1.18 I = 25A, T =-55C F F J See Fig. 1 0.94 I = 10A, T = 25C F J 1.07 I = 25A, T = 25C F J V 1.19 I = 50A, T = 25C F J 0.88 I = 25A, T =125C F J I Reverse Leakage Current 10 A V = V Rated R R R See Fig. 2 250 A V = V Rated, T = 125C R R J C Junction Capacitance, See Fig. 3 78 pF V = 200V T R L Series Inductance 4.8 nH Measured from center of cathod S pad to center of anode pad Dynamic Recovery Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions t Reverse Recovery Time 35 ns I = 1.0A,V = 30V, di /dt = 200A/s rr F R f t Reverse Recovery Time 28 ns T = 25C See Fig. rr1 J t 43 T = 125C 5 I = 25A rr2 J F I Peak Recovery Current 3.9 T = 25C See Fig. RRM1 J I 6.1 T = 125C 6 V = 160V RRM2 J R Q Reverse Recovery Charge 61 T = 25C See Fig. rr1 J Q 146 T = 125C 7 di /dt = 200A/s rr2 J f di /dt1 Peak Rate of Fall of Recovery Current 820 T = 25C See Fig. (rec)M J di /dt2 During t 1560 T = 125C 8 (rec)M b J Thermal - Mechanical Characteristics Parameter Typ. Max. Units R Junction-to-Case 1.76 C/W thJC Wt Weight 1.0 g 2 www.irf.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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