IDM02G120C5XTMA1 Infineon

Diode Silicon Carbide Schottky Diode IDM02G120C5 th 5 Generation thinQ 1200 V SiC Schottky Diode Final Data Sheet Rev. 2.0, 2015-06-22 Industrial Power Control IDM02G120C5 th 5 Generation thinQ 1200 V SiC Schottky Diode SiC Schottky Diode Features: Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications 1 Pb-free lead plating RoHS compliant 2 Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 and backside cathode Pin 2 anode Key Performance and Package Parameters Type V I Q T Marking Package DC F C j,max IDM02G120C5 1200V 2A 14nC 175C D0212C5 PG-TO252-2 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2015-06-22