IGB30N60H3 Infineon

IGB30N60H3 electronic component of Infineon
IGB30N60H3 Infineon
IGB30N60H3 IGBT Transistors
IGB30N60H3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IGB30N60H3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGB30N60H3 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IGB30N60H3
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Datasheet: IGB30N60H3 Datasheet (PDF)
Price (USD)
1: USD 3.075 ea
Line Total: USD 3.08 
Availability : 1261
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 3.075
10$ 1.944
100$ 1.364
500$ 1.166
1000$ 1.1
5000$ 1.0098

Availability 1261
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.075
10$ 1.944
100$ 1.364
500$ 1.166
1000$ 1.1
5000$ 1.0098

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGB30N60H3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGB30N60H3 and other electronic components in the IGBT Transistors category and beyond.

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IGB30N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI PG-TO263-3 Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGB30N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic 0.80 IGBT thermal resistance, R K/W t h J C junction case Thermal resistance, R 6 cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =30A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.43mA, 4.1 4.9 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 2000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =30A - 16.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 1630 - pF i s s CE Output capacitance C V =0V, - 108 - GE o s s f=1MHz Reverse transfer capacitance C - 50 - r s s Gate charge Q V =480V, I =30A - 167 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I - 275 - A V =15V,t 5 s C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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