PD - 95103
IRF1010NSPbF
IRF1010NLPbF
Advanced Process Technology
Ultra Low On-Resistance
HEXFET Power MOSFET
Dynamic dv/dt Rating
D
175C Operating Temperature
V = 55V
DSS
Fast Switching
Fully Avalanche Rated
R = 11m
DS(on)
Lead-Free
G
Description
I = 85A
D
Advanced HEXFET Power MOSFETs from
S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
2
The D Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
2
resistance in any existing surface mount package. The
D Pak TO-262
2
D Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 85
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 60 A
D C GS
I Pulsed Drain Current 290
DM
P @T = 25C Power Dissipation 180 W
D C
Linear Derating Factor 1.2 W/C
V Gate-to-Source Voltage 20 V
GS
I Avalanche Current 43 A
AR
E Repetitive Avalanche Energy 18 mJ
AR
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 0.85
JC
R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 C/W
JA
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Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 11 m V = 10V, I = 43A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 32 S V = 25V, I = 43A
fs DS D
25 V = 55V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
250 V = 44V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I
nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 120 I = 43A
g D
Q Gate-to-Source Charge 19 nC V = 44V
gs DS
Q Gate-to-Drain Mille) Charge 41 V = 10V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 13 V = 28V
d(on) DD
t Rise Time 76 I = 43A
r D
ns
t Turn-Off Delay Time 39 R = 3.6
d(off) G
t Fall Time 48 V = 10V, See Fig. 10
f GS
D
Between lead,
L Internal Drain Inductance
D
6mm (0.25in.)
nH
G
from package
L Internal Source Inductance
S
and center of die contact S
C Input Capacitance 3210 V = 0V
iss GS
C Output Capacitance 690 V = 25V
oss DS
C Reverse Transfer Capacitance 140 pF = 1.0MHz, See Fig. 5
rss
E Single Pulse Avalanche Energy 1030250 mJ I = 4.3A, L = 270H
AS AS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
85
(Body Diode) showing the
G
I Pulsed Source Current integral reverse
SM
290
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 43A, V = 0V
SD J S GS
t Reverse Recovery Time 69 100 ns T = 25C, I = 43A
rr J F
Q Reverse Recovery Charge 220 230 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on
S D
Repetitive rating; pulse width limited by
This is a calculated value limited to T = 175C .
J
max. junction temperature. ( See fig. 11 )
Calculated continuous current based on maximum allowable
Starting T = 25C, L = 270H
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junction temperature. Package limitation current is 75A.
R = 25, I = 43A, V =10V (See Figure 12)
G AS GS
Uses IRF1010N data and test conditions.
I 43Adi/d210A/s, V V ,
SD DD (BR)DSS
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
T 175C
J
For recommended footprint and soldering techniques refer to
Pulse width 400s; duty cycle 2%.
application note #AN-994.
This is a typical value at device destruction and
represents operation outside rated limits.
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