PD - 9.1478A IRF4905S/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF4905S) V = -55V DSS l Low-profile through-hole (IRF4905L) l 175C Operating Temperature R = 0.02 DS(on) l Fast Switching G l P-Channel = -74A I D l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pak TO-262 resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF4905L) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -74 D C GS I T = 100C Continuous Drain Current, V -10V -52 A D C GS I Pulsed Drain Current -260 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 930 mJ AS I Avalanche Current -38 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 JA 8/25/97IRF4905S/L Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.05 V/C Reference to 25C, I = -1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.02 V = -10V, I = -38A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 21 S V = -25V, I = -38A fs DS D -25 V = -55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -44V, V = 0V, T = 150C DS GS J = 20V Gate-to-Source Forward Leakage 100 VGS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Total Gate Charge 180 I = -38A Qg D Q Gate-to-Source Charge 32 nC V = -44V gs DS Q Gate-to-Drain Mille) Charge 86 V = -10V, See Fig. 6 and 13 gd GS Turn-On Delay Time 18 V = -28V td(on) DD t Rise Time 99 I = -38A r D ns Turn-Off Delay Time 61 R = 2.5 td(off) G t Fall Time 96 R = 0.72, See Fig. 10 f D Between lead, L Internal Source Inductance S nH 7.5 and center of die contact C Input Capacitance 3400 V = 0V iss GS Output Capacitance 1400 pF V = -25V Coss DS C Reverse Transfer Capacitance 640 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -74 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -260 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.6 V T = 25C, I = -38A, V = 0V SD J S GS t Reverse Recovery Time 89 130 ns T = 25C, I = -38A rr J F Q Reverse Recovery Charge 230 350 nC di/dt = -100A/s rr Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) ton S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Uses IRF4905 data and test conditions Starting T = 25C, L = 1.3mH J R = 25, I = -38A. (See Figure 12) G AS I -38A, di/dt -270A/s, V V , SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994.