IRFB4110PBF Infineon

Hot IRFB4110PBF electronic component of Infineon
IRFB4110PBF Infineon
IRFB4110PBF MOSFETs
IRFB4110PBF  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of IRFB4110PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB4110PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRFB4110PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 120A 4V @ 250uA 4.5 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRFB4110PBF Datasheet (PDF)
Price (USD)
250: USD 1.131 ea
Line Total: USD 282.75 
Availability : 6803
  
Ship by Mon. 06 Oct to Fri. 10 Oct
QtyUnit Price
250$ 1.131
1000$ 1.0563
2000$ 1.0437
6250$ 1.0062

Availability 6803
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 250
Multiples : 50
QtyUnit Price
250$ 1.131
1000$ 1.0563
2000$ 1.0437
6250$ 1.0062


Availability 4540
Ship by Thu. 02 Oct to Mon. 06 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.6125
10$ 1.236
100$ 1.133
500$ 1.133
1000$ 1.0802


Availability 516
Ship by Thu. 02 Oct to Mon. 06 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.9716
10$ 2.5781
14$ 1.3705
38$ 1.2891
1000$ 1.2755


Availability 1607
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 103
Multiples : 1
QtyUnit Price
103$ 2.4696
139$ 1.8201


Availability 11640
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 1.0522


Availability 13330
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 118
Multiples : 1
QtyUnit Price
118$ 2.1463
189$ 1.3342
192$ 1.3156
500$ 1.1952
1000$ 1.0496


Availability 368
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 226
Multiples : 1
QtyUnit Price
226$ 2.0142
500$ 1.8173
1000$ 1.6658
10000$ 1.4906
100000$ 1.2488

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFB4110PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB4110PBF and other electronic components in the MOSFETs category and beyond.

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TechnologiesThe Infineon Technologies IRFB4110PBF is a N-channel, enhancement-mode power MOSFET with Trench technology in a TO-220-3 package. It has a max VDS (Drain-Source Voltage) of 100V, rDS(on) (Drain-Source On Resistance) of 4.5 mOhms at 75A and an ID (Continuous Drain Current) of 120A. It also has a maximum gate threshold voltage of 4V and a gate-source leakage current of 250uA, making it suitable for a variety of high-power applications. The TO-220-3 package is RoHS compliant, making it a safe option for environmental protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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