STP110N10F7 STMicroelectronics

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I P DS DS(on) D TOT STF110N10F7 45 A 30 W TAB 100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance 3 3 2 2 1 1 100% avalanche tested TO-220FP TO-220 Applications Switching applications Figure 1. Internal schematic diagram Description th These devices utilize the 7 generation of design rules of STs proprietary STripFET technology, % 7 with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STF110N10F7 TO-220FP 110N10F7 Tube STP110N10F7 TO-220 July 2013 DocID024058 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STF110N10F7, STP110N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 DocID024058 Rev 2