INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter = distribution and higher efficiency than Generation 3 TM G IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in E bridge configurations Industry standard TO-220AB package n-channel Lead-Free % & ( ) ( * * ( TO-220AB ( & + / 0% / 1 / 2 3 4 2 3 , 5 6 %( 7 8 6 2 3 9: < % % 9: / 0% / = / 5 2 3 < % % 5 : ( 5 2 3 < % % 5 : ( 6 >( %( %( 4 + 14 + 1%%- % - 1 4 4 : & A + BA%- %& ( % ) * + ,- + .- www.irf.com 1 / 0% : / 1 / / 3 / 3 H %( : / 1D / / 3 / 3 % / 0% / D ) 3 , / 3 / DD / 3 4 9 , 3 , 3 / * / 4 1 / 3 / 3 H / %( * / %/ / 3 / 3 H 9: 1 / 3 / 3 , I / H / 3 / / 3 1 / / 3 / / 3 1 / 3 / 9: / ( 6 , / 3 9 4 4 1 3 3 0% 8 = / 3 = / C * + - ,, 3 , C 0% * + - , D / 3 6 / 9 ) C * + - D ) / 3 / > % 6 3 % 1 3 , / 3 6) / > % 4 4 / 3 / 3 4 9 % 1 4 0 E E 0 > : * 8 14 7 7 0 > : * 8 4D % 9 D ) 0 : * 8 4 D > % 6 3 9 D ) % , 3 , / 3 6) / > % 4 / 3 / 3 4 9 % 4 0 E E 0 : * 8 4 % 7 7 8 0% , F %% % ( ( ( / 3 / > ( ( ,6 (9 / 3 4 / 9 , 7 ( 6 G 3 F. 7 7 % 6 1 3 9 ) 3 6 3 5 7 7 4 1 3 9 1 3 / 3 / C 7 7 * ) ) 3 9 1 3 1 H 5 9 7 ) H 3 9 3 , 2 www.irf.com