PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features V = 600V CES Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10s Short Circuit Capability. I = 4.2A, T =100C C C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. G Positive VCE (on) Temperature Coefficient. t > 10s, T =150C sc J Lead-Free E V typ. = 1.9V CE(on) n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. D-Pak Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 7.8 A C C T = 100C Continuous Collector Current 4.2 I C C Pulse Collector Current (Ref.Fig.C.T.5) 15.6 I CM Clamped Inductive Load current I 15.6 LM I Tc = 25C Diode Continous Forward Current 6.0 F I Tc = 100C Diode Continuous Forward Current 3.2 F I Diode Maximum Forward Current 15.6 FM Gate-to-Emitter Voltage 20 V V GE P T = 25C Maximum Power Dissipation 52 W D C P T = 100C Maximum Power Dissipation 21 D C Operating Junction and -55 to +150 T J T Storage Temperature Range C STG Soldering Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 2.4 C/W JC R Junction-to-Case- Diode 8.8 JC Junction-to-Ambient, (PCB Mount) R 50 JA WtWeight 0.3g www.irf.com 1 2/23/04IRGR3B60KD2PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.32 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C V I = 3.0A, V = 15V 5,6,7 Collector-to-Emitter Voltage 1.9 2.4 CE(on) C GE I = 3.0A, V = 15V, T = 150C 2.2 2.6 V 9,10,11 C GE J V V = V , I = 250A Gate Threshold Voltage 3.5 4.5 5.5 9,10,11 GE(th) CE GE C V / T Threshold Voltage temp. coefficient -8.5 mV/C V = V , I = 1mA (25C-150C) 12 GE(th) J CE GE C gfe Forward Transconductance 1.9 S V = 50V, I = 3.0A, PW = 80s CE C I Zero Gate Voltage Collector Current 1.0 150 A V = 0V, V = 600V CES GE CE 200 500 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I = 3.0A, V = 0V 8 FM F GE I = 3.0A, V = 0V, T = 150C 1.5 1.8 F GE J I V = 20V, V = 0V GES Gate-to-Emitter Leakage Current 100 nA GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q Total Gate Charge (turn-on) 13 20 I = 3.0A 23 g C Q Gate-to-Emitter Charge (turn-on) 1.5 2.3 nC V = 400V CT1 ge CC Q V = 15V Gate-to-Collector Charge (turn-on) 6.6 9.9 gc GE E I = 3.0A, V = 400V Turn-On Switching Loss 62 75 CT4 on C CC E V = 15V, R = 100, L = 2.5mH Turn-Off Switching Loss 39 50 J off GE G E Total Switching Loss 100 120 T = 25C tot J t Turn-On delay time 18 22 I = 3.0A, V = 400V d(on) C CC t Rise time 15 21 ns V = 15V, R = 100, L = 2.5mH CT4 r GE G t Turn-Off delay time 110 120 T = 25C d(off) J t Fall time 68 80 f E I = 3.0A, V = 400V CT4 on Turn-On Switching Loss 91 100 C CC E V = 15V, R = 100, L = 2.5mH off Turn-Off Switching Loss 98 140 J GE G 13,15 E T = 150C Total Switching Loss 190 230 WF1,WF2 tot J t Turn-On delay time 18 22 I = 3.0A, V = 400V 14,16 d(on) C CC t Rise time 17 22 ns V = 15V, R = 100, L = 2.5mH CT4 r GE G t Turn-Off delay time 120 140 T = 150C WF1 d(off) J t Fall time 91 105 WF2 f C Input Capacitance 190 V = 0V ies GE C Output Capacitance 23 pF V = 30V 22 oes CC C Reverse Transfer Capacitance 6.6 f = 1.0MHz res T = 150C, I = 15.6A, Vp = 600V 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE J C V =500V,V =+15V to 0V,R = 100 CT2 CC GE G T = 150C, Vp = 600V, R = 100 SCSOA Short Circuit Safe Operating Area 10 s CT3 J G V =360V,V = +15V to 0V WF4 CC GE Erec Reverse Recovery Energy of the Diode 38 44 J T = 150C 17,18,19 J t Diode Reverse Recovery Time 77 84 ns V = 400V, I = 3.0A, L = 2.5mH 20,21 rr CC F I Diode Peak Reverse Recovery Current 4.8 5.3 A V = 15V, R = 100 CT4,WF3 rr GE G Energy losses includetai and diode reverse recovery. V = 80% (V ), V = 15V, L = 100H, R = 100. CC CES GE G When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com