Data Sheet No. PD60240 IRS20124(S)PbF Digital Audio Driver with Discrete Deadtime and Protection Features Product Summary 200 V high voltage ratings deliver up to 1000 W V 200 V max. SUPPLY output power in Class D audio amplifier applications I +/- 1 A / 1.2 A typ. O Integrated deadtime generation and bi-directional Selectable Deadtime over-current sensing simplify design 15 ns, 25 ns, 35 ns, 45 ns typ. Programmable compensated preset deadtime for improved THD performances over temperature Prop Delay Time 60 ns typ. High noise immunity Shutdown function protects devices from overload Bi-Directional Over- conditions Current Sensing Operates up to 1 MHz 3.3 V/5 V logic compatible input Package RoHS compliant 14-Lead SOIC Typical Application Diagram <20V <200V IN IN NC OCSET 1 NC <20V DT/SD VB HO OCSET 2 VS OC OC COM NC V LO CC SD IRS20124 www.irf.com 1IRS20124S(PbF) Description The IRS20124 is a high voltage, high speed power MOSFET driver with internal deadtime and shutdown functions specially designed for Class D audio amplifier applications. The internal dead time generation block provides accurate gate switch timing and enables tight deadtime settings for better THD performances. In order to maximize other audio performance characteristics, all switching times are designed for immunity from external disturbances such as V perturbation and incoming switching noise on the DT pin. Logic CC inputs are compatible with LSTTL output or standard CMOS down to 3.0 V without speed degradation. The output drivers feature high current buffers capable of sourcing 1.0 A and sinking 1.2 A. Internal delays are optimized to achieve minimal deadtime variations. Proprietary HVIC and latch immune CMOS technologies guarantee operation down to V = 4 V, providing outstanding capabilities of latch and surge immunities with s rugged monolithic construction. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High-side floating supply voltage -0.3 220 B V High-side floating supply voltage V -20 V +0.3 s B B V HO High-side floating output voltage Vs-0.3 VB+0.3 V Low-side fixed supply voltage -0.3 20 CC V V Low-side output voltage -0.3 Vcc+0.3 LO V Input voltage -0.3 Vcc+0.3 IN V OC pin input voltage -0.3 Vcc+0.3 OC V OCSET1 pin input voltage -0.3 Vcc+0.3 OCSET1 V OCSET2 pin input voltage -0.3 Vcc+0.3 OCSET2 dVs/dt Allowable Vs voltage slew rate - 50 V/ns P Maximum power dissipation - 1.25 W D Rth Thermal resistance, junction to ambient - 100 C/W JA T Junction temperature - 150 J C T Storage temperature -55 150 S T Lead temperature (soldering, 10 seconds) - 300 L www.irf.com 2