X-On Electronics has gained recognition as a prominent supplier of MMBT3904LT1HTSA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3904LT1HTSA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3904LT1HTSA1 Infineon

MMBT3904LT1HTSA1 electronic component of Infineon
MMBT3904LT1HTSA1 Infineon
MMBT3904LT1HTSA1 Bipolar Transistors - BJT
MMBT3904LT1HTSA1  Semiconductors

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See Product Specifications
Part No. MMBT3904LT1HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Infineon Technologies Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A
Datasheet: MMBT3904LT1HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.18 ea
Line Total: USD 0.18 
Availability - 222269
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
128040
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.0564
6000 : USD 0.051
9000 : USD 0.045
15000 : USD 0.0445
21000 : USD 0.0425

60740
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 2736
Multiples : 1
2736 : USD 0.095
2850 : USD 0.0913
2977 : USD 0.0874
3111 : USD 0.0836
3258 : USD 0.0798
3419 : USD 0.076
3604 : USD 0.0721
3803 : USD 0.0684
6000 : USD 0.0646
15000 : USD 0.0585
30000 : USD 0.0547

213
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 10
Multiples : 10
10 : USD 0.1224
100 : USD 0.0958
300 : USD 0.0619
3000 : USD 0.049
6000 : USD 0.0437
9000 : USD 0.041

222269
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.18
10 : USD 0.1025
100 : USD 0.0792
500 : USD 0.0598
1000 : USD 0.0528
3000 : USD 0.044
6000 : USD 0.0407
9000 : USD 0.0363
24000 : USD 0.0352

119310
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.0564
6000 : USD 0.051
9000 : USD 0.045
15000 : USD 0.0445
21000 : USD 0.0425

60740
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3111
Multiples : 1
3111 : USD 0.0836
3258 : USD 0.0798
3419 : USD 0.076
3604 : USD 0.0721
3803 : USD 0.0684
6000 : USD 0.0646
15000 : USD 0.0585
30000 : USD 0.0547

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT3904LT1HTSA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3904LT1HTSA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT3904/MMBT3904 s1A 1=B 2=E 3=C - - - SOT23 SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 60 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 200 mA Collector current I C mV Total power dissipation- P tot T 71C, SOT23, SMBT3904 330 S T 115C, SOT363, SMBT3904S 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS SMBT3904/MMBT3904 240 SMBT3904S 140 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2012-08-21 1SMBT3904...MMBT3904 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 40 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 60 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I - - 50 nA CBO V = 30 V, I = 0 CB E 1) - DC current gain h FE I = 100 A, V = 1 V 40 - - C CE I = 1 mA, V = 1 V 70 - - C CE I = 10 mA, V = 1 V 100 - 300 C CE I = 50 mA, V = 1 V 60 - - C CE I = 100 mA, V = 1 V 30 - - C CE 1) Collector-emitter saturation voltage V V CEsat I = 10 mA, I = 1 mA - - 0.2 C B I = 50 mA, I = 5 mA - - 0.3 C B 1) Base emitter saturation voltage V BEsat I = 10 mA, I = 1 mA 0.65 - 0.85 C B I = 50 mA, I = 5 mA - - 0.95 C B 1 Pulse test: t < 300s D < 2% 2012-08-21 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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