MMBT3906LT1HTSA1 Infineon

MMBT3906LT1HTSA1 electronic component of Infineon
MMBT3906LT1HTSA1 Infineon
MMBT3906LT1HTSA1 Bipolar Transistors - BJT
MMBT3906LT1HTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT3906LT1HTSA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906LT1HTSA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT3906LT1HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Infineon Technologies Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A
Datasheet: MMBT3906LT1HTSA1 Datasheet (PDF)
Price (USD)
1: USD 0.2325 ea
Line Total: USD 0.23 
Availability - 30568
  
Ship by Fri. 25 Jul to Tue. 29 Jul
QtyUnit Price
1$ 0.2325
10$ 0.1462
100$ 0.0948
500$ 0.0655
1000$ 0.0539
3000$ 0.0484
6000$ 0.0451
9000$ 0.0385
24000$ 0.0363

Availability 34920
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0502
6000$ 0.0459
9000$ 0.0404
15000$ 0.0385
21000$ 0.0366


Availability 59141
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 6330
Multiples : 1
QtyUnit Price
6330$ 0.0411


Availability 46509
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 2870
Multiples : 1
QtyUnit Price
2870$ 0.0906
4706$ 0.0553
4774$ 0.0545
4808$ 0.0541
4855$ 0.0535
4902$ 0.053
4939$ 0.0527
4988$ 0.0521
6000$ 0.0516
15000$ 0.0493
30000$ 0.0488


Availability 30568
Ship by Fri. 25 Jul to Tue. 29 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2325
10$ 0.1462
100$ 0.0948
500$ 0.0655
1000$ 0.0539
3000$ 0.0484
6000$ 0.0451
9000$ 0.0385
24000$ 0.0363

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Packaging
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT3906LT1HTSA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906LT1HTSA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A 1=B 2=E 3=C - - - SOT23 SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 40 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 200 mA Collector current I C mW Total power dissipation- P tot T 71C, SOT23, MMBT3906 330 S T 115C, SOT363, MMBT3906S 250 S T 107C, SC74, MMBT3906U 330 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2012-08-21 1SMBT3906...MMBT3906 Thermal Resistance Parameter Symbol Value Unit 1) mW Junction - soldering point R thJS SMBT3906/ MMBT3906 240 SMBT3906S 140 SMBT3906U 130 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 40 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 40 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I - - 50 nA CBO V = 30 V, I = 0 CB E 1) - DC current gain h FE I = 100 A, V = 1 V 60 - - C CE I = 1 mA, V = 1 V 80 - - C CE I = 10 mA, V = 1 V 100 - 300 C CE I = 50 mA, V = 1 V 60 - - C CE I = 100 mA, V = 1 V 30 - - C CE 1) Collector-emitter saturation voltage V V CEsat I = 10 mA, I = 1 mA - - 0.25 C B I = 50 mA, I = 5 mA - - 0.4 C B 1) Base emitter saturation voltage V BEsat I = 10 mA, I = 1 mA 0.65 - 0.85 C B I = 50 mA, I = 5 mA - - 0.95 C B 1 Pulse test: t < 300s D < 2% 2012-08-21 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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