S29GL128S10TFB020 Infineon

S29GL128S10TFB020 electronic component of Infineon
S29GL128S10TFB020 Infineon
S29GL128S10TFB020 NOR Flash
S29GL128S10TFB020  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of S29GL128S10TFB020 NOR Flash across the USA, India, Europe, Australia, and various other global locations. S29GL128S10TFB020 NOR Flash are a product manufactured by Infineon. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

Part No. S29GL128S10TFB020
Manufacturer: Infineon
Category: NOR Flash
Description: NOR Flash Nor
Datasheet: S29GL128S10TFB020 Datasheet (PDF)
Price (USD)
1: USD 9.3711 ea
Line Total: USD 9.37 
Availability : 0
  
QtyUnit Price
1$ 9.3711
10$ 6.2143
25$ 6.1009
91$ 5.4205
273$ 5.3978
546$ 5.0576
1001$ 4.8422
2548$ 4.6948
5005$ 4.6267

Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.3711
10$ 6.2143
25$ 6.1009
91$ 5.4205
273$ 5.3978
546$ 5.0576
1001$ 4.8422
2548$ 4.6948
5005$ 4.6267

   
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RoHS - XON
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We are delighted to provide the S29GL128S10TFB020 from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S29GL128S10TFB020 and other electronic components in the NOR Flash category and beyond.

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S29GL01GS/S29GL512S S29GL256S/S29GL128S 1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/ 256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte), 3.0 V, GL-S Flash Memory General Description The Cypress S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics CMOS 3.0 Volt Core with Versatile I/O Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each 65 nm MirrorBit Eclipse Technology sector Single supply (V ) for read / program / erase (2.7V to 3.6V) CC Separate 1024-byte One Time Program (OTP) array with two Versatile I/O Feature lockable regions Wide I/O voltage range (V ): 1.65V to V IO CC Common Flash Interface (CFI) parameter table x16 data bus Temperature Range / Grade Asynchronous 32-byte Page read Industrial (-40C to +85C) 512-byte Programming Buffer Industrial Plus(-40C to +105C) Programming in Page multiples, up to a maximum of 512 Automotive, AEC-Q100 Grade 3 (-40 C to +85 C) bytes Automotive, AEC-Q100 Grade 2 (-40 C to +105 C) Single word and multiple program on same word options 100,000 Program / Erase Cycles Automatic Error Checking and Correction (ECC) internal 20 Years Data Retention hardware ECC with single bit error correction Packaging Options Sector Erase 56-pin TSOP Uniform 128-kbyte sectors 64-ball LAA Fortified BGA, 13 mm x 11 mm Suspend and Resume commands for Program and Erase 64-ball LAE Fortified BGA, 9 mm x 9 mm operations 56-ball VBU Fortified BGA, 9 mm x 7 mm Status Register, Data Polling, and Ready/Busy pin methods to determine device status Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-98285 Rev. *L Revised May 03, 2017S29GL01GS/S29GL512S S29GL256S/S29GL128S Performance Summary Maximum Read Access Times Random Access Page Access Time CE Access Time OE Access Time Density Voltage Range Time (t ) (t ) (t ) (t ) ACC PACC CE OE Full V = V 90 15 90 25 CC IO 128 Mb VersatileIO V 10025100 35 IO Full V = V 90 15 90 25 CC IO 256 Mb VersatileIO V 10025100 35 IO Full V = V 10015100 25 CC IO 512 Mb VersatileIO V 11025110 35 IO Full V = V 10015100 25 CC IO 1 Gb VersatileIO V 11025110 35 IO Typical Program and Erase Rates Buffer Programming 1.5 MB/s (512 bytes) Sector Erase (128 kbytes) 477 kB/s Maximum Current Consumption Active Read at 5 MHz, 30 pF 60 mA Program 100 mA Erase 100 mA Standby 100 A Document Number: 001-98285 Rev. *L Page 3 of 107

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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