The T430N12TOFXPSA1 with Infineon is an insulated-gate bipolar transistor (IGBT) designed for operation with higher voltages than are typical of standard IGBTs. It is manufactured by Infineon Technologies and features a maximum collector-emitter voltage rating of 1200V, a maximum collector current rating of 400A, and a reverse-recovery time of 13ns. The T430N12TOFXPSA1 is ideally suited for applications such as motor drive, renewable energy, and solar systems.