X-On Electronics has gained recognition as a prominent supplier of T830N12TOFXPSA1 SCRs across the USA, India, Europe, Australia, and various other global locations. T830N12TOFXPSA1 SCRs are a product manufactured by Infineon. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

T830N12TOFXPSA1 Infineon

T830N12TOFXPSA1 electronic component of Infineon
T830N12TOFXPSA1 Infineon
T830N12TOFXPSA1 SCRs
T830N12TOFXPSA1  Semiconductors

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Part No. T830N12TOFXPSA1
Manufacturer: Infineon
Category: SCRs
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 153.7529 ea
Line Total: USD 153.75 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 22 Jul to Thu. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 153.7529

   
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We are delighted to provide the T830N12TOFXPSA1 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T830N12TOFXPSA1 and other electronic components in the SCRs category and beyond.

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The Infineon T830N12TOFXPSA1 is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in a variety of applications. This MOSFET is specially designed for low-side, logic-level switching and switching at higher frequencies where on-state resistance, rDS(on) is of particular importance. It is rated for a maximum drain-source voltage (VDS) of 30V, with a maximum drain current (ID) of 40A. It is a TO-220FP package and features an integrated fast body diode. This reduces switching losses significantly and enables improved efficiency in buck and boost topologies. The product also features integrated over-voltage and over-temperature protection.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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CYPRESS SEMI
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Cypress Semiconductor
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INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
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INTERNATIONAL RECTIFIER
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INTL RECTIFIER
IR
IRH
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