Technische Information / technical information Netz-Thyristor-Modul TT250N Phase Control Thyristor Module Key Parameters V / V 1200 1800 V DRM RRM I 250 A (T =85 C) TAVM C I 7000 A TSM 3570A (T =55C) C V 0,8 V T0 r 0,7 m T R 0,124 K/W thJC Base plate 50 mm Weight 800 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT250N Phase Control Thyristor Module TT250N... TD250N... DT250N... Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 1800 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 1800 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 410 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 250 A Dauergrenzstrom T = 85C I C TAVM 261 A average on-state current T = 82C C 8.000 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 7.000 A surge current T = T , t = 10 ms vj vj max P 320.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 245.000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 150 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,5 V Durchlaspannung T = T , i = 800 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,7 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12 V I 200 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12 V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12 V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 1200 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G prepared by: CD date of publication: 29.01.13 approved by: ML revision: 3.1 Date of Publication 2013-01-29 Revision: 3.1 Seite/page 2/11