Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT TD B6HK 124 N 16 RR N B6 Thyristor Module with Chopper-IGBT Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Gleichrichterdiode, -thyristor / Rectifierdiode, -thyristor Periodische Spitzensperrspannung Tvj = - 40C...Tvj max V 1600 V RRM repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert (pro Element) I 70 A TRMSM RMS on-state current (per chip) Ausgangsstrom TC = 85C I 125 A d output current Stostrom-Grenzwert Tvj = 25C, tp = 10ms I 650 A TSM T = T , t = 10ms surge current vj vj max p 550 A Grenzlastintegral Tvj = 25C, tp = 10ms It 2100 As T = T , t = 10ms It-value vj vj max p 1500 As Kritische Stromsteilheit DIN IEC 747-6 (di/dt) 120 A/s cr f = 50Hz, i = 0,6A, di /dt = 0,6A/s critical rate of rise of on-state current GM G Kritische Spannungssteilheit Tvj = Tvj max, v D = 0,67 VDRM (dv/dt) cr 8. Kennbuchstabe / 8th letter F critical rate of rise of off-state voltage 1000 V/s IGBT Kollektor-Emitter-Sperrspannung V 1200 V CES collector-emitter voltage T = 80C Kollektor-Dauergleichstrom C I 70 A C DC-collector current t = 1ms Periodischer Kollektor-Spitzenstrom p I 150 A CRM repetitive peak collektor current T = 25C Gesamt-Verlustleistung C P 400 W tot total power dissipation Gate-Emitter Spitzenspannung V 20 V GE gate-emitter peak voltage Schnelle Diode / Fast diode Periodische Spitzensperrspannung V 1200 V RRM repetitive peak reverse voltage T = 80C Dauergleichstrom C I 35 A F DC forward current t = 1ms Periodischer Spitzenstrom p I 70 A FRM repetitive peak forward current Modul RMS, f = 50Hz, t = 1min Isolations-Prfspannung V 2,5 kV ISOL NTC connected to baseplate insulation test voltage prepared by: Ralf Jrke date of publication: 13.12.2000 approved by: Lothar Kleber revision: 1 BIP AM R. Jrke 19. Dez 00 A 32/00 Seite/page 1(12)Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT TD B6HK 124 N 16 RR N B6 Thyristor Module with Chopper-IGBT Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Gleichrichterdiode, -thyristor / Rectifierdiode, -thyristor min. typ. max. T = T , i = 100A Durchlaspannung vj vj max F v 1,35 V F forward voltage Schleusenspannung T = T V 0,75 V vj vj max (TO) threshold voltage T = T r Ersatzwiderstand vj vj max 6,3 m T forward slope resistance T = 25C, v = 6V Zndstrom I 150 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6V V 2,5 V vj D GT gate trigger voltage T = T , v = 6V Nicht zndender Steuerstrom vj vj max D I 5,0 mA GD gate non-trigger current T = T , v = 0,5 V 2,5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V 0,2 V vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 6V, R = 5W I Haltestrom vj D A 200 mA H holding current T = 25C, v = 6V, R 20W Einraststrom I 600 mA vj D GK L i = 0,6A, di /dt = 0,6A/s, t = 10s latching current GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i 10 mA vj vj max D R v = V , v = V forward off-state and reverse currents D DRM R RRM Zndverzug DIN IEC 747-6 t 1,2 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = 0,6A/s vj GM G Freiwerdezeit T = T , i = 50A t vj vj max TM q v = 100V, V = 0,67 V circuit commutated turn-off time RM DM DRM d /dt = 20V/s, -di /dt = 10A/s VD T 7. Kennbuchstabe / 7th letter O 190 s T = 25C R Modul Leitungswiderstand, Anschlsse-Chip C 1 m AA +KK lead resistance, terminals-chip IGBT T = 25C, i = 70A, v = 15V Kollektor-Emitter Sttigungsspannung v 2,05 2,75 V vj C GE CE sat collector-emitter saturation voltage T = 125C, i = 70A, v = 15V 2,40 vj C GE Gate-Emitter-Schwellspannung T = 25C, i = 3mA, v = v v 4,5 5,5 6,5 V vj C GE CE GE(TO) gate-emitter threshold voltage T = 25C, f = 1MHz, C Eingangskapazitt vj 0 5,1 nF ies input capacitance v = 25V, v = 0V CE GE Kollektor-Emitter Reststrom T = 25C, v = 1200V, v = 0V i 10 500 A vj CE GE CES T = 125C, v = 1200V, v = 0V collector-emitter cut-off current vj CE GE 500 T = 25C, v = 0V, v = 20V i Gate-Emitter Reststrom vj CE GE 400 nA GES gate leakage current T = 25C, v = 0V, v = 20V Emitter-Gate Reststrom i 400 nA vj CE EG EGS gate-leakage current Schnelle Diode / Fast diode Durchlaspannung T = 25C, i = 35A v 1,85 2,40 V vj F F T = 125C, i = 35A forward voltage vj F 1,75 i = 35A, -di/dt = 900A/s, v = 600V Q Sperrverzgerungsladung FM R r recovered charge T = 25C 3,6 As vj T = 125C vj 7,6 As BIP AM R. Jrke 19. Dez 00 Seite/page 2(12)