TDB6HK95N16LOF Infineon

TDB6HK95N16LOF electronic component of Infineon
TDB6HK95N16LOF Infineon
TDB6HK95N16LOF Discrete Semiconductor Modules
TDB6HK95N16LOF  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of TDB6HK95N16LOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TDB6HK95N16LOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. TDB6HK95N16LOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1600V 75A HF-CNTL
Datasheet: TDB6HK95N16LOF Datasheet (PDF)
Price (USD)
1: USD 225.607 ea
Line Total: USD 225.61 
Availability : 0
  
QtyUnit Price
1$ 225.607
12$ 215.579
27$ 214.383

Availability 0
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 225.607
12$ 215.579
27$ 214.383

   
Manufacturer
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RoHS - XON
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Product
Type
Vr - Reverse Voltage
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Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Configuration
Operating Temperature
Output Current
Brand
Gate Trigger Current - Igt
Holding Current Ih Max
Reverse Voltage
Typical Delay Time
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Cnhts
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We are delighted to provide the TDB6HK95N16LOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TDB6HK95N16LOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / Technical Information Netz-Thyristor-Modul 1) NB6 TT B6C 95 N 16 (ISOPACK) Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values T = - 40C...T V , V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max 1600 V DRM RRM repetitive peak forward off-state and reverse voltages T = - 40C...T Vorwrts-Stospitzensperrspannung vj vj max V 1600 V DSM non-repetitive peak forward off-state voltage Rckwrts-Stospitzensperrspannung T = + 25C...T V 1700 V vj vj max RSM non-repetitive peak reverse voltage I Durchlastrom-Grenzeffektivwert (pro Element) 75 A TRMSM RMS on-state current (per chip) T = 85C Ausgangsstrom I 95 A C d T = 66C output current 130 A C T = 45C, KM 11 45 A A T = 45C, KM 33 62 A A T = 35C, KM 14 (V = 45l/s) 101 A A L T = 35C, KM 33 (V = 90l/s) 115 A A L T = 25C, t = 10ms I Stostrom-Grenzwert vj p 720 A TSM T = T , t = 10ms surge current vj vj max p 620 A T = 25C, t = 10ms Grenzlastintegral vj p It 2590 As T = T , t = 10ms It-value vj vj max p 1920 As Kritische Stromsteilheit DIN IEC 747-6 (di/dt) 120 A/s cr critical rate of rise of on-state current f = 50Hz, i = 0,6A, di /dt = 0,6A/s GM G T = T , v = 0,67 V (dv/dt) Kritische Spannungssteilheit vj vj max D DRM cr 8. Kennbuchstabe / 8th letter F critical rate of rise of off-state voltage 1000 V/s Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 100A v max. 1,64 V vj vj max T T on-state voltage T = T V Schleusenspannung vj vj max 0,95 V (TO) threshold voltage T =T Ersatzwiderstand r 5,5 m vj vj max T slope resistance Zndstrom T = 25C, v = 6V I max. 150 mA vj D GT gate trigger current T = 25C, v = 6V V Zndspannung vj D max. 2,5 V GT gate trigger voltage T = T , v = 6V Nicht zndender Steuerstrom I max. 5,0 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 2,5 mA vj vj max D DRM T = T , v = 0,5 V V Nicht zndende Steuerspannung vj vj max D DRM max. 0,2 V GD gate non-trigger voltage T = 25C, v = 6V, R = 5 I Haltestrom max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6V, R 20 I max. 600 mA vj D GK L latching current i = 0,6A, di /dt = 0,6A/s, t = 10s GM G g T = T i , i Vorwrts- und Rckwrts-Sperrstrom vj vj max max. 8 mA D R v = V , v = V forward off-state and reverse currents D DRM R RRM 1) gilt auch fr / also valid for TD B6HK95N16 BIP PPE4 rev. 2 19. Okt 05 A 05/05 Seite/page 1(6)Technische Information / Technical Information Netz-Thyristor-Modu Phase Control Thyristor Module TT B6C 95 N 16 (ISOPACK) NB6 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Zndverzug DIN IEC 747-6 t max. 1,2 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = 0,6A/s vj GM G Freiwerdezeit T = T , i = 50A t vj vj max TM q circuit commutated turn-off time v = 100V, V = 0,67 V RM DM DRM d /dt = 20V/s, -di /dt = 10A/s VD T 7. Kennbuchstabe / 7th letter O typ. 190 s Isolations-Prfspannung RMS, f = 50Hz, t = 1min V 3,0 kV ISOL insulation test voltage RMS, f = 50Hz, t = 1sec 3,6 kV Thermische Eigenschaften / Thermal properties pro Modul / per module, = 120rect Innerer Wrmewiderstand R max. 0,137 C/W thJC thermal resistance, junction to case pro Element / per chip, = 120rect max. 0,820 C/W pro Modul / per module, DC max. 0,108 C/W pro Element / per chip, DC max. 0,650 C/W bergangs-Wrmewiderstand pro Modul / per module R max. 0,033 C/W thCK thermal resistance, case to heatsink pro Element / per chip max. 0,200 C/W Hchstzulssige Sperrschichttemperatur T 125 C vj max max. junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature Lagertemperatur T - 40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see appendix page 3 Si-Elemente mit Ltkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Innere Isolation Al O 2 3 internal insulation Anzugsdrehmoment fr mechanische Befestigung Toleranz / tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / tolerance +5% / -10% M2 6 Nm terminal connection torque Gewicht G typ. 300 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50Hz 50 m/s vibration resistance Khlkrper / heatsinks : KM 11 KM 14 KM 17 KM 33 BIP PPE4 rev. 2 19. Okt 05 Seite/page 2(6)

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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INF
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Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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