The TT104N14KOF is a trench gate insulated gate bipolar transistor (IGBT) produced by Infineon Technologies. This part features innovative silicon with an integrated gate drive, allowing for reduced board space and improved reliability. It has a maximum collector-emitter voltage of 1200V, a maximum collector current of 104A, and a maximum gate to emitter voltage of 20V. This IGBT is used in a wide range of applications such as solar inverters, welding machines, motor drives, and more.