X-On Electronics has gained recognition as a prominent supplier of TTB6C135N16LOF DISCRETE SEMICONDUCTOR MODULES across the USA, India, Europe, Australia, and various other global locations. TTB6C135N16LOF DISCRETE SEMICONDUCTOR MODULES are a product manufactured by Infineon. We provide cost-effective solutions for DISCRETE SEMICONDUCTOR MODULES, ensuring timely deliveries around the world.

TTB6C135N16LOF Infineon

TTB6C135N16LOF electronic component of Infineon
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Part No.TTB6C135N16LOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1600V 100A FL-CNTL
Datasheet: TTB6C135N16LOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 290.6268 ea
Line Total: USD 581.25

Availability - 0
MOQ: 2  Multiples: 2
Pack Size: 2
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 2
Multiples : 2
2 : USD 290.6268

0 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 90
Multiples : 90
90 : USD 256.9807

   
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RoHS - XON
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Vr - Reverse Voltage
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Operating Temperature
Output Current
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Gate Trigger Current - Igt
Holding Current Ih Max
Reverse Voltage
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Technische Information / Technical Information Netz-Thyristor-Modul 1) NB6 TT B6C 135 N 16 (ISOPACK) Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values T = - 40C...T V , V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max 1600 V DRM RRM repetitive peak forward off-state and reverse voltages T = - 40C...T Vorwrts-Stospitzensperrspannung vj vj max V 1600 V DSM non-repetitive peak forward off-state voltage Rckwrts-Stospitzensperrspannung T = + 25C...T V 1600 V vj vj max RSM non-repetitive peak reverse voltage I Durchlastrom-Grenzeffektivwert (pro Element) 100 A TRMSM RMS on-state current (per chip) T = 85C Ausgangsstrom I 135 A C d T = 67C output current 173 A C T = 45C, KM 11 49 A A T = 45C, KM 33 69 A A T = 35C, KM 14 (V = 45l/s) 119 A A L T = 35C, KM 33 (V = 90l/s) 139 A A L T = 25C, t = 10ms I Stostrom-Grenzwert vj p 1000 A TSM T = T , t = 10ms surge current vj vj max p 870 A T = 25C, t = 10ms Grenzlastintegral vj p It 5000 As T = T , t = 10ms It-value vj vj max p 3780 As Kritische Stromsteilheit DIN IEC 747-6 (di/dt) 120 A/s cr critical rate of rise of on-state current f = 50Hz, i = 0,6A, di /dt = 0,6A/s GM G T = T , v = 0,67 V (dv/dt) Kritische Spannungssteilheit vj vj max D DRM cr 8. Kennbuchstabe / 8th letter F critical rate of rise of off-state voltage 1000 V/s Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 150A v max. 1,81 V vj vj max T T on-state voltage T = T V Schleusenspannung vj vj max 0,95 V (TO) threshold voltage T =T Ersatzwiderstand r 4,3 m vj vj max T slope resistance Zndstrom T = 25C, v = 6V I max. 150 mA vj D GT gate trigger current T = 25C, v = 6V V Zndspannung vj D max. 2,5 V GT gate trigger voltage T = T , v = 6V Nicht zndender Steuerstrom I max. 5,0 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 2,5 mA vj vj max D DRM T = T , v = 0,5 V V Nicht zndende Steuerspannung vj vj max D DRM max. 0,2 V GD gate non-trigger voltage T = 25C, v = 6V, R = 5 I Haltestrom max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6V, R 20 I max. 600 mA vj D GK L latching current i = 0,6A, di /dt = 0,6A/s, t = 10s GM G g T = T i , i Vorwrts- und Rckwrts-Sperrstrom vj vj max max. 10 mA D R v = V , v = V forward off-state and reverse currents D DRM R RRM 1) gilt auch fr / also valid for TD B6HK 135 N 16 BIP PPE4 rev. 2 21. Okt 05 A 06/05 Seite/page 1(6)Technische Information / Technical Information Netz-Thyristor-Modul TT B6C 135 N 16 (ISOPACK) NB6 Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Zndverzug DIN IEC 747-6 t max. 1,2 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = 0,6A/s vj GM G T = T , i = 50A t Freiwerdezeit vj vj max TM q v = 100V, V = 0,67 V circuit commutated turn-off time RM DM DRM d /dt = 20V/s, -di /dt = 10A/s VD T 7. Kennbuchstabe / 7th letter O typ. 190 s Isolations-Prfspannung RMS, f = 50Hz, t = 1min V 3,0 kV ISOL RMS, f = 50Hz, t = 1sec insulation test voltage 3,6 kV Thermische Eigenschaften / Thermal properties R Innerer Wrmewiderstand pro Modul / per module, = 120rect max. 0,098 C/W thJC thermal resistance, junction to case pro Element / per chip, = 120rect max. 0,590 C/W pro Modul / per module, DC max. 0,078 C/W pro Element / per chip, DC max. 0,470 C/W bergangs-Wrmewiderstand pro Modul / per module R max. 0,033 C/W thCK pro Element / per chip thermal resistance, case to heatsink max. 0,200 C/W Hchstzulssige Sperrschichttemperatur T 125 C vj max max. junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature T Lagertemperatur - 40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see appendix page 3 Si-Elemente mit Ltkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Innere Isolation Al O 2 3 internal insulation Anzugsdrehmoment fr mechanische Befestigung Toleranz / tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / tolerance +5% / -10% M2 6 Nm terminal connection torque Gewicht G typ. 300 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50Hz 50 m/s vibration resistance Khlkrper / heatsinks : KM 11 KM 14 KM 17 KM 33 BIP PPE4 rev. 2 21. Okt 05 Seite/page 2(6)

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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