Technische Information / technical information Net z-Thyristor-Modul TZ740N Phase Control Thyristor Module Key Parameters V / V 2000V / 2200V DRM RRM I 819A (T =85C) TAVM C I 30000A TSM V 0,82V T0 r 0,17m T R 0,0405K/W thJC Base plate 70mm Weight 1950g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TZ740N Phase Control Thyristor Module TZ740N TZ740N22KOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2000 2200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 2000 2200 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 2100 2300 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 1500 A TRMSM maximum RMS on-state current Dauergrenzstrom I 819 A T = 85C TAVM C average on-state current 30000 Stostrom-Grenzwert Tvj = 25C, tP = 10ms ITSM A 26500 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 4500000 As vj P It-value T = T , t = 10ms 3500000 As vj vj max P 200 Kritische Stromsteilheit DIN IEC 747-6 (diT/dt)cr A/s critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F 1000 V/s Charakteristische Werte / Characteristic values max. 1,51 V Durchlaspannung T = T , i = 3000 A v vj vj max T T on-state voltage max. 0,82 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,17 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 500 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 2500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 170 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G AG date of publication: 2016-11-25 prepared by: revision: 3.5 approved by: MS Date of Publication 2016-11-25 Revision: 3.5 Seite/page 2/11