Product Technical OrOrdderer Folder Support NowNow InterFET 2N2608-9 2N2608, 2N2609 P-Channel JFET Features TO-18 Bottom View InterFET P0032F Geometry Drain Typical Noise: 10 nV/Hz 3 Low Ciss: 3.2pF Typical Gate/Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Choppers SOT23 Top View Data Switches Commutators Source 1 Gate Description 3 The 30V InterFET 2N2608 and 2N2609 are Drain 2 targeted for data switches and low-level chopper designs. Gate leakages are typically less than 1nA at room temperatures. The TO-18 package is TO-92 Bottom View hermetically sealed and suitable for military applications. Drain 3 Gate 2 Source 1 Product Summary Parameters 2N2608 Min 2N2609 Min Unit BVGSS Gate to Source Breakdown Voltage 30 30 V I Drain to Source Saturation Current -0.9 -2 mA DSS V Gate to Source Cutoff Voltage 1 1 V GS(off) GFS Forward Transconductance 1000 2500 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N2608 2N2609 Through-Hole TO-18 Bulk PN2608 PN2609 Through-Hole TO-92 Bulk SMP2608 SMP2609 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP2608TR SMP2609TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N2608COT 2N2609COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N2608CFT 2N2609CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35078.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N2608-9 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 30 V I Continuous Forward Gate Current -10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N2608 2N2609 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = 1A 30 30 V Breakdown Voltage Gate to Source IGSS VGS = 5V, VDS = 0V 10 10 nA Reverse Current Gate to Source VGS(OFF) VDS = -5V, ID = -1nA 1 4 1 4 V Cutoff Voltage Drain to Source V = 0V, V = -5V GS DS IDSS -0.9 -4.5 -2 -10 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N2608 2N2609 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = -5V, VGS = 0V, f = 1kHz 1000 2500 S Transconductance Ciss Input Capacitance VDS = -5.4V, VGS = 1V, f = 1MHz 17 30 pF 2N2608-9 2 of 5 InterFET Corporation Document Number: IF35078.R00 www.InterFET.com December, 2018