Product Technical OrOrdderer Folder Support NowNow InterFET 2N4220-1A 2N4220/A, 2N4221/A N-Channel JFET TO-72 Bottom View Features InterFET N0016H Geometry Gate 3 Typical Noise: 6 nV/Hz Low Ciss: 3.5pF Typical Drain 4 Case 2 High Input Impedance RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Mixers Oscillators Source 1 Small Signal Amplifier VHF Amplifiers Gate 3 Drain 2 Description The -50V InterFET 2N4220/A and 2N4221/A are targeted for sensitive amplifier stages for mid- TO-92 Bottom View frequencies designs. Gate leakages are typically less than 10pA at room temperatures. The A variants are screened for lower noise. The TO-72 Gate 3 package is hermetically sealed and suitable for Drain 2 military applications. Source 1 Product Summary Parameters 2N4220/A Min 2N4221/A Min Unit BVGSS Gate to Source Breakdown Voltage -30 -30 V IDSS Drain to Source Saturation Current 0.5 2 mA V Gate to Source Cutoff Voltage V GS(off) G Forward Transconductance 1000 2000 S FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4220 2N4221 2N4220A 2N4221A Through-Hole TO-72 Bulk PN4220 PN4221 PN4220A PN4221A Through-Hole TO-92 Bulk SMP4220 SMP4221 SMP4220A SMP4221A Surface Mount SOT23 Bulk SMP4220TR SMP4221TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4220ATR SMP4221ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4220COT 2N4221COT Chip Orientated Tray 2N4220ACOT 2N4221ACOT (COT Waffle Pack) COT 400/Waffle Pack 2N4220CFT 2N4221CFT Chip Face-up Tray 2N4220ACFT 2N4221ACFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35010.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4220-1A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -30 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 175 C STG Static Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4220/A 2N4221/A Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -30 -30 V Breakdown Voltage -0.1 -0.1 Gate to Source VGS = -15V, VDS = 0V, TA = 25C nA IGSS Reverse Current V = -15V, V = 0V, T = 150C A GS DS A -0.1 -0.1 Gate to Source -0.5 -2.5 -1 -5 V V V = 15V, I = ( ) GS DS D Voltage (50) (50) (200) (200) A Gate to Source V V = 15V, I = 0.1nA -4 -6 V GS(OFF) DS D Cutoff Voltage Drain to Source VGS = 0V, VDS = 15V I 0.5 3 2 6 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4220/A 2N4221/A Parameters Conditions Min Max Min Max Unit Forward G V = 15V, V = 0V, f = 1kHz 1000 4000 2000 5000 S FS DS GS Transconductance Output G V = 15V, V = 0V, f = 1kHz 10 20 S OS DS GS Conductance Forward Y V = 15V, V = 0V, f = 100MHz 750 750 S DS GS fs Transmittance C Input Capacitance V = 15V, V = 0V, f = 1MHz 6 6 pF iss DS GS Reverse Transfer C V = 15V, V = 0V, f = 1MHz 2 2 pF rss DS GS Capacitance VDS = 15V, VGS = 0V, f = 100Hz Noise Figure dB NF RG = 1 M 2.5 2.5 2N4220-1A 2 of 5 InterFET Corporation Document Number: IF35010.R00 www.InterFET.com December, 2018