Product Technical OrOrdderer Folder Support NowNow InterFET 2N4338-9 2N4338, 2N4339 N-Channel JFET Features TO-18 Bottom View InterFET N0016SH Geometry Gate/Case 3 Low Noise: 4.2 nV/Hz Typical High Gain: 1.6mS Typical (2N4339) Drain 2 Low Cutoff Voltage: 2N4338 < 1.0V RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Audio Amplifiers Small Signal Amplifier Source 1 Ultrahigh Impedance Pre-Amplifier Voltage Controlled Resistor Gate 3 Current Limiters and Regulators Drain 2 Description The -50V InterFET 2N4338 and 2N4339 are TO-92 Bottom View targeted for sensitive amplifier stages for mid- frequencies designs. Gate leakages are typically less than 10pA at room temperatures. The Gate 3 2N4338 has a cutoff voltage of less than 1.0V Drain 2 ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for Source 1 military applications. Product Summary Parameters 2N4338 Min 2N4339 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 V I Drain to Source Saturation Current 0.2 0.5 mA DSS V Gate to Source Cutoff Voltage -0.3 -0.6 V GS(off) GFS Forward Transconductance 600 800 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4338 2N4339 Through-Hole TO-18 Bulk PN4338 PN4339 Through-Hole TO-92 Bulk SMP4338 SMP4339 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4338TR SMP4339TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4338COT 2N4339COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N4338CFT 2N4339CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35007.R01Product Technical OrOrdderer Folder Support NowNow InterFET 2N4338-9 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 175 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4338 2N4339 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -50 -50 V Breakdown Voltage Gate to Source V = -30V, V = 0V, T = 25C -0.1 -0.1 GS DS A IGSS nA Reverse Current V = -30V, V = 0V, T = 150C -100 -100 GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 0.1A -0.3 -1.0 -0.6 -1.8 V Cutoff Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 0.2 0.6 0.5 1.5 mA Saturation Current (Pulsed) ID(OFF) Drain Cutoff Current VDS = 15V, VGS = -5V 0.05 0.05 nA Forward IDF VDS = 0V, IGS = 10A 0.4 0.8 0.4 0.8 V Diode Voltage Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4338 2N4339 Parameters Conditions Min Max Min Max Unit Forward G V = 15V, V = 0V, f = 1kHz 600 1800 800 2400 S FS DS GS Transconductance Output G V = 15V, V = 0V, f = 1kHz 5 15 S OS DS GS Conductance Drain to Source R V = 0V, I = 0A, f = 1kHz 2500 1700 DS(ON) GS D ON Resistance C Input Capacitance V = 15V, V = 0V, f = 1MHz 7 7 pF iss DS GS Reverse Transfer C V = 15V, V = 0V, f = 1MHz 3 3 pF rss DS GS Capacitance VDS = 15V, VGS = 0V, f = 1kHz Noise Figure 1 1 dB NF RG = 1 M, BW = 200 Hz 2N4338-9 2 of 7 InterFET Corporation Document Number: IF35007.R01 www.InterFET.com November, 2019